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pro vyhledávání: '"S. F. Bergeron"'
Publikováno v:
IBM Journal of Research and Development. 26:580-589
The development and implementation of plasma processing techniques for silicon-gate FET manufacturing applications is described. Process requirements are discussed for the stripping of photoresist and the isotropic etching of thin films. A systematic
Autor:
S. F. BERGERON, R. J. WATTS
Publikováno v:
Chemischer Informationsdienst. 10