Zobrazeno 1 - 10
of 10
pro vyhledávání: '"S. F. A. Rahman"'
Autor:
M N M Nuzaihan, U Hashim, M K Md Arshad, A Rahim Ruslinda, S F A Rahman, M F M Fathil, Mohd H Ismail
Publikováno v:
PLoS ONE, Vol 11, Iss 3, p e0152318 (2016)
A top-down nanofabrication approach is used to develop silicon nanowires from silicon-on-insulator (SOI) wafers and involves direct-write electron beam lithography (EBL), inductively coupled plasma-reactive ion etching (ICP-RIE) and a size reduction
Externí odkaz:
https://doaj.org/article/ed85ca25639046109ce3bfc8d7f93e06
Publikováno v:
Polish Journal of Management Studies; 2021, Vol. 24 Issue 2, p136-155, 20p
Autor:
M. Nuzaihan M. N., M. I. Mazlan, M. N. F. Zulkiffli, S. M. Hazri, M. F. M. Fathil, C. Ibau, M. K. Md Arshad, S. F. A. Rahman, S. R. Kasjoo
Publikováno v:
AIP Conference Proceedings.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2268fffb5fa7ba13f1ef9ae411f8df1b
https://doi.org/10.1063/1.5080847
https://doi.org/10.1063/1.5080847
Autor:
M. F. M. Fathil, N. Tamjis, M. K. Md Arshad, M. Nuzaihan M. N., S. F. A. Rahman, R. M. Ayub, A. R. Ruslinda, U. Hashim, C. C. Ong, R. F. Abdullah, M. H. M. Ghazali
Publikováno v:
AIP Conference Proceedings.
This paper investigates the effect of different doping concentrations on the performance of a polycrystalline silicon nanowire (poly-SiNW) field-effect transistor (FET) for biosensing application. The p-type poly-SiNW FET biosensor was designed and s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::67970d5f46b85878841b02100f93a794
https://doi.org/10.1063/1.5080819
https://doi.org/10.1063/1.5080819
Autor:
S F A, Rahman, N A, Yusof, U, Hashim, R, Hushiarian, M Nuzaihan, M N, M N, Hamidon, R M, Zawawi, M F M, Fathil
Publikováno v:
Analytica chimica acta. 942
Dengue Virus (DENV) has become one of the most serious arthropod-borne viral diseases, causing death globally. The existing methods for DENV detection suffer from the late stage treatment due to antibodies-based detection which is feasible only after
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::7f03ff32bb993c356f26379f90e57795
https://pubmed.ncbi.nlm.nih.gov/27720124
https://pubmed.ncbi.nlm.nih.gov/27720124
Autor:
A. M. Hashim, Mohd Ridzuan Ahmad, N. K. Ali, Vijay K. Arora, S. F. A. Rahman, Mastura Shafinaz Zainal Abidin
Publikováno v:
AIP Conference Proceedings.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c7b91659cf1da71487b13bffab07b77f
https://doi.org/10.1063/v1341.frontmatter
https://doi.org/10.1063/v1341.frontmatter
Autor:
S. F. A. Rahman, A. M. Hashim, N. K. Ali, M. Rusop, N. Nafarizal, Abdul Manaf Hashim, Vijay K. Arora
Publikováno v:
AIP Conference Proceedings.
A three‐branch junction (TBJ) nanowire device is shown to exhibit a unique nonlinear input‐output characteristics. The effect of contact resistance on such characteristics is investigated. It is shown that metal contact having small contact resis
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3a9187fe69865a83365155d9859934e7
https://doi.org/10.1063/1.3587026
https://doi.org/10.1063/1.3587026
Autor:
Mastura Shafinaz Zainal Abidin, Mohd Ridzuan Ahmad, S. F. A. Rahman, Vijay K. Arora, Abdul Manaf Hashim, N. K. Ali
Publikováno v:
AIP Conference Proceedings.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ce0384ed168be25c4307460188644d82
https://doi.org/10.1063/v1341.backmatter
https://doi.org/10.1063/v1341.backmatter
Autor:
S. F. Abd. Rahman, U. Hashim, M. N. Md. Nor, A. M. Mohamed Nuri, M. E. A. Shohini, S. Salleh, Mohamad Rusop, Tetsuo Soga
Publikováno v:
AIP Conference Proceedings.
Miniaturization and performance improvements are driving the electronics industry to shrink the feature size of semiconductor device. Because of its diffraction limit, conventional photolithography is becoming increasingly insufficient. In this paper
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::719d8d49946f5bee723440ff892f3461
https://doi.org/10.1063/1.3160194
https://doi.org/10.1063/1.3160194
Autor:
S. F. Abd Rahman, Azlan Abdul Aziz, Abdul Manaf Hashim, Mazuina Mohamad, Farahiyah Mustafa, Roslan Hashim
Publikováno v:
Scopus-Elsevier
In this study, Pt-circular Schottky diode is successfully fabricated for gas sensor application. The fabricated Schottky diode shows good rectification characteristics. The device which shows improvement in term of wiring connection for electrical ch
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3d6a3fae2752bd1aa6ec9b62750a2036
http://www.scopus.com/inward/record.url?eid=2-s2.0-78049418480&partnerID=MN8TOARS
http://www.scopus.com/inward/record.url?eid=2-s2.0-78049418480&partnerID=MN8TOARS
