Zobrazeno 1 - 5
of 5
pro vyhledávání: '"S. E. Schulz"'
Publikováno v:
NANOARCH
Back-gated carbon nanotube field-effect transistors have been fabricated using a wafer-level technology. Source and drain electrodes are structured by lift-off and wet etching. AFM measurements reveal residual contaminations originating from structur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eeeb3163bfe2bd62b3130a3ec4bf9c13
https://doi.org/10.1145/2770287.2770320
https://doi.org/10.1145/2770287.2770320
Publikováno v:
Space OPS 2004 Conference.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::78227871715ff283f6d6b9528a0cb528
https://doi.org/10.2514/6.2004-711-490
https://doi.org/10.2514/6.2004-711-490
Autor:
U. Weiss, T. Gessner, T. Werner, T. Winkler, M. Uhlig, S. E. Schulz, A. Bertz, Reinhard Streiter
Publikováno v:
Extended Abstracts of the 1998 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::941fe4244e938f07a05bc22405f0f9a3
https://doi.org/10.7567/ssdm.1998.a-6-4
https://doi.org/10.7567/ssdm.1998.a-6-4
Autor:
W. Grünewald, S. E. Schulz
Publikováno v:
Fresenius' Journal of Analytical Chemistry. 349:239-240
The reaction between tungsten layers [deposited by chemical vapor deposition (CVD) as well as by physical vapor deposition (PVD)] and an aluminium alloy (AlSi) has been investigated. For CVD tungsten layers deposited on AlSi by silane reduction of WF
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3134d349b5d3ca4f967b6d36242f815b
https://doi.org/10.1007/bf00323295
https://doi.org/10.1007/bf00323295
Autor:
H. Schmidt, A. Jakob, T. Haase, K. Kohse-Höinghaus, S. E. Schulz, T. Wächtler, T. Gessner, H. Lang
Publikováno v:
Zeitschrift für Anorganische und Allgemeine Chemie; Oct2005, Vol. 631 Issue 13/14, p2786-2791, 0p