Zobrazeno 1 - 9
of 9
pro vyhledávání: '"S. E. Ready"'
Autor:
Robert A. Street, S. E. Ready, R. D. Bringans, E. M. Chow, JengPing Lu, David Eric Schwartz, Janos Veres, P. Mei
Publikováno v:
2016 IEEE International Electron Devices Meeting (IEDM).
Additive manufacturing and 3D printing are poised to reshape entire manufacturing value chains. To be truly disruptive, additive manufacturing has to move beyond shapes and colors. Novel printing technologies are beginning to emerge that enable confo
Publikováno v:
NIP & Digital Fabrication Conference. 22:17-20
Publikováno v:
Handbook of Visual Display Technology ISBN: 9783642359477
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3b2f7ff25709d24c71187918d24c547e
https://doi.org/10.1007/978-3-642-35947-7_183-1
https://doi.org/10.1007/978-3-642-35947-7_183-1
Publikováno v:
Applied Physics Letters. 70:188-190
Nuclear magnetic resonance of 29Si is used to study structural properties of porous silicon and siloxene. Evidence for changes in the chemical shift of porous silicon due to quantum confinement could not be observed. A hydride phase exhibiting a chem
Publikováno v:
Springer Proceedings in Physics ISBN: 9783642763878
Springer Proceedings in Physics
Springer Proceedings in Physics
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::799be310e0572ee1559bf2b7465e4ab2
https://doi.org/10.1007/978-3-642-76385-4_47
https://doi.org/10.1007/978-3-642-76385-4_47
Autor:
J. B. Boyce, S. E. Ready
Publikováno v:
Physical Review B. 38:11008-11018
Information on the local environment of dopants in compensated and singly doped amorphous Si has been obtained using NMR spin-echo double-resonance spectroscopy, a technique that is very sensitive to interatomic distance. It is found that there is a
Publikováno v:
AIP Conference Proceedings.
Hydrogen’s role in the doping efficiency and long term stability of hydrogenated amorphous silicon is not well understood. The introduction of dopants has been observed to cause an increase in the deposition rate and in the formation of dangling bo