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Temperature Dependence of Bound Exciton Emissions in GaN

Autor: Zhe Chuan Feng, D. J. Wolford, G. D. Gilliland, Matthew J. Schurman, D. G. Chtchekine, S. J. Chua, S. E. Ralph, Ian T. Ferguson

Publikováno v: Scopus-Elsevier

The dissociation channels of two prominent bound exciton complexes in wurtzite GaN thin films are determined via an extensive temperature dependent photoluminescence study. The shallow donor bound exciton dissociation at low temperatures (T ≤ 50 K)

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a576615da6a95650f3f48caefad23161
https://doi.org/10.1557/s1092578300003331

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Properties of low-pressure chemical vapor epitaxial GaN films grown using hydrazoic acid (HN3)

Autor: D. G. Chtchekine, Y. Bu, Ming-Chang Lin, F. T. Bacalzo, K. K. Bajaj, Y. Chen, S. R. Stock, S. E. Ralph, G. D. Gilliland, L. P. Fu

Publikováno v: Journal of Applied Physics. 81:2197-2207

We have grown high-quality GaN films on sapphire using a new nitrogen precursor, hydrazoic acid (HN3). Films were grown at 600 °C on (0001) sapphire substrates in a low-pressure chemical-vapor-deposition system using triethylgallium and hydrazoic ac

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::bd38bcdfb75b2793d6ec73f21b5c1c05
https://doi.org/10.1063/1.364253

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Performance of In0.47Ga0.53As metal-semiconductor-metal hybrid receiver at 1.55 ?m

Autor: Y. H. Kwark, P. C. Wong, G. D. Pettit, Franklin F. Tong, D. T. McInturff, S. E. Ralph

Publikováno v: Optical and Quantum Electronics. 25:699-703

We report on the performance at 1.55 μm of a hybrid receiver combining an In0.47Ga0.53As metal-semiconductor-metal photodetector (with buried AllnAs buffer layer) with a GaAs MESFET preamplifier. A bit error rate of 10-9 is measured at 1 Gbps with n

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::9068f7ff5d321a2c2579e37a29b79a65
https://doi.org/10.1007/bf00430559

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Optoelectronic Interferometry and Spectroscopy beyond 6THz

Autor: S. E. Ralph, D. Grischkowsky

Publikováno v: Optical Society of America Annual Meeting.

We report a new interferometric technique1, to measure freely propagating THz radiation. Via this new technique which uses unamplified, 100MHz, 60fs laser pulse excitation of a two source interferometer, we demonstrate useful THz power beyond 6THz. A

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::3bc50e9dffc0eea8a44e5a16ffc4cdd2
https://doi.org/10.1364/oam.1991.pd34

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