Zobrazeno 1 - 10
of 48
pro vyhledávání: '"S. E. Hooper"'
Autor:
Valerie Bousquet, Colin J. Humphreys, W. S. Tan, H. Xiu, Tim Michael Smeeton, M. Rossetti, Jon Heffernan, Matthias Kauer, S. E. Hooper
Publikováno v:
physica status solidi (a). 206:1205-1210
This paper reports the state of the art performance for blue― violet laser diodes (LD) grown by molecular beam epitaxy. Improvements in device design and growth have resulted in a threshold current density of 3.6 kA/cm 2 , which translates into imp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7a0ff215ba75c2de1f22b864a0c2149f
https://doi.org/10.1002/pssa.200880842
https://doi.org/10.1002/pssa.200880842
Autor:
Valerie Bousquet, Jon Heffernan, W. S. Tan, Jennifer Mary Barnes, Matthias Kauer, J. Windle, S. E. Hooper
Publikováno v:
physica status solidi (a). 204:221-226
We report on the characteristics of our recent room temperature continuous-wave InGaN quantum well laser diodes grown by by molecular beam epitaxy (MBE). Uncoated ridge waveguide lasers fabricated on freestanding GaN substrates have a continuous-wave
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d992e296d9e46d1f36a29bf9faa84d0f
https://doi.org/10.1002/pssa.200673518
https://doi.org/10.1002/pssa.200673518
Autor:
Jennifer Mary Barnes, C. Zellweger, Valerie Bousquet, S. E. Hooper, Jon Heffernan, Matthias Kauer, J. Windle
Publikováno v:
physica status solidi c. 3:1379-1382
We review the significant progress made in the development of nitride laser diodes by molecular beam epitaxy (MBE). We report on our recent result of room temperature continuous-wave operation of InGaN quantum well laser diodes grown by MBE. Ridge wa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d83dcb5c95ee80c7d3f1759a0020d997
https://doi.org/10.1002/pssc.200565302
https://doi.org/10.1002/pssc.200565302
Autor:
C. Zellweger, Valerie Bousquet, Katherine L. Johnson, S. E. Hooper, Matthias Kauer, Jon Heffernan
Publikováno v:
Journal of Crystal Growth. 278:361-366
The latest results from MBE-grown InGaN multiple quantum well laser diodes and light emitting diodes are presented. The laser diodes were grown on free-standing n-type GaN substrates and fabricated into index guided structures with a ridge width of 3
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7a62c36733d2c4e9d65ba11b999c2a74
https://doi.org/10.1016/j.jcrysgro.2004.12.049
https://doi.org/10.1016/j.jcrysgro.2004.12.049
Autor:
Katherine L. Johnson, C. Zellweger, Valerie Bousquet, Jon Heffernan, S. E. Hooper, Matthias Kauer
Publikováno v:
physica status solidi (a). 202:868-874
We report progress in the development of InGaN multiple quantum well laser diodes grown by MBE. Lasers were grown by gas-source MBE using ammonia as the source of nitrogen. Devices were grown on both GaN template substrates with dry-etched laser face
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5a226d3a86a9b38994defdaa16c0e545
https://doi.org/10.1002/pssa.200461407
https://doi.org/10.1002/pssa.200461407
Publikováno v:
phys. stat. sol. (a). 201:2668-2671
We report on the first InGaN quantum well laser diodes grown by molecular beam epitaxy (MBE). Devices were grown by gas-source MBE using ammonia as a source of nitrogen and elemental group III sources. The devices were grown on commercially available
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::467e697c18926685535a0bffeb6b4e43
https://doi.org/10.1002/pssa.200405034
https://doi.org/10.1002/pssa.200405034
Autor:
C. T. Foxon, J.W. Orton, Tin S. Cheng, S. E. Hooper, Yu.A. Kudriavtsev, Sergei V. Novikov, B. Ya. Ber
Publikováno v:
Journal of Crystal Growth. 197:7-11
We report Mg doping experiments in GaN grown by plasma-enhanced molecular beam epitaxy on sapphire and GaAs substrates. Secondary ion mass spectrometry was used to measure the Mg concentration as a function of Mg flux. Our data show a linear dependen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ae711c0151d3f1cc4b7d4d2f391b10a7
https://doi.org/10.1016/s0022-0248(98)00919-1
https://doi.org/10.1016/s0022-0248(98)00919-1
Autor:
Jon Heffernan, S. E. Hooper, Matthias Kauer, Colin J. Humphreys, H. Xiu, Tim Michael Smeeton, Ej Thrush
Publikováno v:
physica status solidi c. 5:2204-2206
The defects found in electrically degraded GaN-based lasers have been characterised by transmission electron microscopy. In a laser that had been operated until failure, defects containing contact metals were observed. Combined with data from the las
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7c4361d2d70ec97ec08cd62431cd6444
https://doi.org/10.1002/pssc.200778546
https://doi.org/10.1002/pssc.200778546
Autor:
S N Novikov, L.B Flannery, C. T. Foxon, J.W. Orton, Ian Harrison, A. V. Andrianov, D.E. Lacklison, Tin S. Cheng, B. Ya. Ber, Yu.A. Kudriavtsev, S. E. Hooper, D J Dewsnip
Publikováno v:
Semiconductor Science and Technology. 13:927-935
We describe measurements of the electrical and luminescence properties of Mg-doped GaN films grown by plasma-enhanced molecular beam epitaxy on sapphire and GaAs substrates. Secondary ion mass spectroscopy measurements were used to determine the tota
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d1fe58fb4d39df2d5d63787365a51918
https://doi.org/10.1088/0268-1242/13/8/018
https://doi.org/10.1088/0268-1242/13/8/018
Autor:
S. E. Hooper, D.E. Lacklison, Ian Harrison, A. V. Andrianov, G B Ren, J.W. Orton, Tin S. Cheng, C. T. Foxon, D J Dewsnip
Publikováno v:
Semiconductor Science and Technology. 13:500-504
We report new lines in the photoluminescence (PL) spectrum of lightly Be-doped GaN. The low-temperature PL spectrum of the lightly doped sample is dominated by a transition at 3.385 eV with first and second LO phonon replicas. Power-resolved PL measu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8663e61aacf61eb9ba97917d0cd9b1e2
https://doi.org/10.1088/0268-1242/13/5/010
https://doi.org/10.1088/0268-1242/13/5/010