Zobrazeno 1 - 10
of 29
pro vyhledávání: '"S. E. Hicks"'
Publikováno v:
Journal of Display Technology. 7:619-623
We used a polymer network to improve the response time of a vertical aligned (VA) mode liquid crystal display (LCD). The polymer network was anisotropic and was oriented in the same direction as the liquid crystal in the dark state. We studied the ef
Publikováno v:
Thin Solid Films. 294:304-307
This paper reports our recent results on a new method for controlling the internal strain and light emission in Si–Si 1− x Ge x quantum dots (QD) by coating a special SiN x layer with controlled built-in stress. It was found that by changing the
Publikováno v:
Microelectronic Engineering. 35:41-44
The resistance of PECVD SiN films to dry etching is increased by more than three orders of magnitude by exposure to an oxygen plasma. In this paper we describe the oxygen treatment. Both the film thickness and the refractive index are modified by the
Publikováno v:
Journal of Applied Physics. 77:4961-4966
A quantum well intermixing probe system has been used to study the damage in GaAs/AlGaAs due to exposure to C2F6 plasmas as a function of rf power. At an etching power of ≤80 W, the photoluminescence energy shift after rapid thermal processing is r
Publikováno v:
Physical Review C. 49:103-115
Differential elastic and inelastic scattering cross sections have been measured for neutrons incident on $^{204}\mathrm{Pb}$ and $^{206}\mathrm{Pb}$ at energies of 2.5, 4.6, and 8.0 MeV and total cross sections in 100-keV steps from 250 keV to 4.0 Me
Publikováno v:
ACM SIGSAC Review. 10:44-62
To establish a basis for discussion of security and privacy for data management, a few fundamental notions need to be defined. In its most general interpretation a database is a structured collection of information. A data management system is intend
Autor:
R. A. G. Gibson, S. E. Hicks
Publikováno v:
Plasma Chemistry and Plasma Processing. 11:455-472
Using optical emission spectroscopy (OES) we have been able to distinguish three operating regimes for the ammonia-silane glow discharge used in plasma nitride deposition. By monitoring the deposition rate and analyzing the structure and composition
Autor:
S. K. Murad, J.S. Aitchison, S. E. Hicks, John H. Marsh, Chris D. W. Wilkinson, A. Saher Helmy, A.C. Bryce
Publikováno v:
Applied Physics Letters. 74:732-734
By exposing the SiO2 films used as annealing caps in the process of impurity free vacancy disordering (IFVD) to an oxygen plasma, which is produced in a reactive ion etching machine, the effect of the exposed caps on quantum well intermixing can be s
Publikováno v:
Philosophical Magazine B. 62:193-212
A range of amorphous hydrogenated silicon-carbide films have been produced using the plasma-enhanced chemical-vapour deposition technique with silane and methane diluted in hydrogen as the parent molecules. The air-exposed and sputter-cleaned surface
Publikováno v:
Physical Review C. 41:2560-2570
Differential cross sections for neutron elastic and inelastic scattering from $^{48}\mathrm{Ca}$ are reported. Presently measured cross sections are for an incident energy of 7.97 MeV. These differential cross sections, total cross sections from 80 k