Zobrazeno 1 - 10
of 69
pro vyhledávání: '"S. E. Harrison"'
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 8, Pp 1118-1128 (2020)
In this article, we focus on the physical modeling of the nonlinear operation of intrinsic photoconductive semiconductor switches (PCSS) based on 4H-SiC using coupled electrical and optical simulations to provide performance bounds of the switch as a
Externí odkaz:
https://doaj.org/article/1086ea9b5c83409295708608659238ff
Autor:
L. J. Collins-McIntyre, M. D. Watson, A. A. Baker, S. L. Zhang, A. I. Coldea, S. E. Harrison, A. Pushp, A. J. Kellock, S. S. P. Parkin, G. van der Laan, T. Hesjedal
Publikováno v:
AIP Advances, Vol 4, Iss 12, Pp 127136-127136-11 (2014)
We report the growth of Mn-doped Bi2Se3 thin films by molecular beam epitaxy (MBE), investigated by x-ray diffraction (XRD), atomic force microscopy (AFM), SQUID magnetometry and x-ray magnetic circular dichroism (XMCD). Epitaxial films were deposite
Externí odkaz:
https://doaj.org/article/596a1f2296a44a33ad44618433b23d88
Autor:
Lars F. Voss, Clint D. Frye, Rebecca J. Nikolic, S. E. Harrison, Catherine Reinhardt, Scott B. Donald
Publikováno v:
Materials Research Letters, Vol 9, Iss 2, Pp 105-111 (2021)
The realization of vertical GaN devices requires deep plasma etching and is contingent on high mask selectivity. In this work, we show that SiO2 can be an effective mask material for deep etching GaN with GaN:SiO2 selectivities greater than 40—high
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e453653fe358d78186d59e5613d1e1c6
https://doi.org/10.1080/21663831.2020.1847735
https://doi.org/10.1080/21663831.2020.1847735
Autor:
Rebecca J. Nikolic, John W. Murphy, Lars F. Voss, Qinghui Shao, S. E. Harrison, Clint D. Frye, James H. Edgar
Publikováno v:
Journal of Electronic Materials. 50:75-79
B $$_{12}$$ P $$_{2}$$ , a wide bandgap semiconductor, has been previously reported to self-heal from high-energy electron bombardment as determined from transmission electron microscopy. However, the effect of irradiation on the electronic transport
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a44cd58906e1e744ca4b3a6a32c0d763
https://doi.org/10.1007/s11664-020-08518-8
https://doi.org/10.1007/s11664-020-08518-8
Autor:
Brandon J. Demory, Victor V. Khitrov, Tiziana C. Bond, S. E. Harrison, Allan Chang, Payal Singh, Christian Tolfa, Logan Echeveria, Kenneth Heinz
Publikováno v:
Laser Resonators, Microresonators, and Beam Control XXIII.
Shrinking the volumetric footprint of gas sensors is desirable as it allows for nonintrusive, nonperturbing gas mixture analysis and access to tight enclosures. Micro-resonators are a perfect candidate for these sensors as their size parameter (~micr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8a8c9808afe5aaa843d2261a8a3288ef
https://doi.org/10.1117/12.2583278
https://doi.org/10.1117/12.2583278
Publikováno v:
2020 4th IEEE Electron Devices Technology & Manufacturing Conference (EDTM).
This paper presents the design of a SiC-based photoconductive semiconductor switch (PCSS) in which a picosecond laser pulse generates excess free electrons and holes that are rapidly separated by applying a lateral electric field across the switch. D
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6d0c5a21b46601c58c596e63ce4a97c2
https://doi.org/10.1109/edtm47692.2020.9117837
https://doi.org/10.1109/edtm47692.2020.9117837
Autor:
Kenneth Heinz, S. E. Harrison, Sean F. Gilmore, Payal Singh, Tiziana C. Bond, Logan Echeveria, Franco Cosi, Allan Chang, Gualtiero Nunz-COnti
Publikováno v:
Laser Resonators, Microresonators, and Beam Control XXII.
This paper discusses ongoing research at Lawrence Livermore National Laboratory (LLNL) that investigates the effectiveness of a whispering gallery mode micro-resonator as a biosensor. Whispering Gallery mode resonators have properties such as ultrahi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3b277f65607f6fcacb4ecd3774ad5562
https://doi.org/10.1117/12.2543800
https://doi.org/10.1117/12.2543800
Autor:
Victor V. Khitrov, Daniele Farnesi, S. E. Harrison, Logan Echeveria, Payal Singh, Gualtiero Nunzi-Conti, Catherine Reinhardt, Tiziana C. Bond, Allan Chang, Kenneth Heinz
Publikováno v:
Laser Resonators, Microresonators, and Beam Control XXII.
This paper discusses ongoing research at Lawrence Livermore National Laboratory (LLNL) that investigates the effectiveness of spherical micro-resonators, coupled to a symmetrically tapered optical fiber, as a gas sensor. We will discuss silica-based
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e0db95e70fb52ec1def6a6f1f7f5dd1c
https://doi.org/10.1117/12.2543815
https://doi.org/10.1117/12.2543815
Autor:
Lars F. Voss, Jennifer K. Hite, Noah A. Allen, Joel Varley, Kyoung A. Kweon, Rebecca A. Nikolic, Clint D. Frye, S. E. Harrison, Vincenzo Lordi, Travis J. Anderson, Bingjun Li, Jung Han
Publikováno v:
ECS Meeting Abstracts. :999-999
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::47e0c7ff17edc83feb26450689cfe588
https://doi.org/10.1149/ma2021-0234999mtgabs
https://doi.org/10.1149/ma2021-0234999mtgabs
Publikováno v:
Journal of Vacuum Science & Technology A. 39:053002
The choice of carrier wafer was found to significantly influence etch rates, selectivity, and morphology in GaN micropillar etching in a Cl2-Ar high-density inductively coupled plasma. 7 × 7 mm2 GaN on sapphire chips with a plasma-enhanced chemical
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a0dfc72d802c18a0c194a8e44885b366
https://doi.org/10.1116/6.0001123
https://doi.org/10.1116/6.0001123