Zobrazeno 1 - 10
of 19
pro vyhledávání: '"S. E. Dizhur"'
Autor:
S. K. Paprotskiy, I. V. Altukhov, A. N. Vinichenko, Miron S. Kagan, I. S. Vasil’evskii, N. A. Khvalkovskiy, S. E. Dizhur
Publikováno v:
Journal of Communications Technology and Electronics. 66:1385-1387
The strong effect of weak interband illumination on tunneling transport in doped GaAs/AlAs superlattices was found under conditions of electric domain formation. The photoresponse at voltages below the threshold one (before the domain formation) did
Autor:
Do-Joong Lee, Tariq Mehmood, Richard M. Osgood, Muhammad Hassan Sayyad, Elizabeth S. Hirst, Munawar Ali Munawar, Jimmy Xu, S. E. Dizhur, Jin Ho Kim
Publikováno v:
Journal of Materials Science. 55:10572-10581
Thermoelectric energy harvesting is one of the keystones of modern green renewable energy generation. Unfortunately, most conventional state-of-the-art inorganic semiconductor thermoelectric generators are expensive, fragile, and not flexible. Consid
Autor:
V. L. Gurtovoi, Michael Faley, Alexandre Avraamovitch Golubov, S. E. Dizhur, Vasily S. Stolyarov, O. V. Skryabina, Andrey G. Shishkin
Publikováno v:
Superconductor science and technology, 33(6):065005. IOP Publishing Ltd.
Superconductor science and technology 33(6), 065005-(2020). doi:10.1088/1361-6668/ab877c
Superconductor science and technology 33(6), 065005-(2020). doi:10.1088/1361-6668/ab877c
We have developed planar nanoSQUID with nanobridge-type Josephson junctions based on the oxidation resistant and high H c2 MoRe alloy. The objective of the research was to reduce size of the SQUID loop with the aim being to reduce magnetic flux noise
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::efb581d9497dece645313ae6962f1c90
https://research.utwente.nl/en/publications/c6325da5-1dc7-401b-97a8-3a009a61bf00
https://research.utwente.nl/en/publications/c6325da5-1dc7-401b-97a8-3a009a61bf00
Al-$\delta$-GaAs structures are studied where tunneling to one or more subbands of the 2D electron system of a near-surface delta-doped layer is observed. Reflection of electrons at the threshold of the emission of LO-phonon is observed. This phenome
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5f72c653f65e0943704ca727b6d4ceff
Autor:
Jin Ho Kim, Tariq Mehmood, Munawar Ali Munawar, Jimmy Xu, Do-Joong Lee, Rachel Odessey, Elizabeth S. Hirst, Richard M. Osgood, S. E. Dizhur, Muhammad Hassan Sayyad
Publikováno v:
Materials Chemistry and Physics. 254:123488
Reduced graphene oxide (RGO) is known for its excellent mechanical, electrical, thermal, and optical properties and is a promising material for high efficiency thermoelectrics. Given that graphene oxidation turns a metallic graphene into semiconducto
Autor:
Yu. M. Zadiranov, S. K. Paprotskiy, Miron S. Kagan, S. E. Dizhur, A. P. Vasil’ev, A. A. Usikova, I. V. Altukhov, N. D. Il’inskaya, A. D. Buravlev, N. A. Khval’kovskii, V. M. Ustinov
Publikováno v:
JETP Letters. 103:122-124
The miniband conductivity in short-period GaAs/AlAs superlattices with a terahertz cavity has been studied. A stepwise decrease in the current caused by the formation of the electrical domains has been observed in current–voltage characteristics at
Autor:
Munawar Ali Munawar, Elizabeth S. Hirst, Jimmy Xu, Richard M. Osgood, Do-Joong Lee, Jin Ho Kim, Muhammad Hassan Sayyad, S. E. Dizhur, Tariq Mehmood, Rachel Odessey
Publikováno v:
Materials Research Express. 6:075614
Autor:
I. S. Vasil’evskii, I. V. Altukhov, S. K. Paprotskiy, Miron S. Kagan, N. A. Khvalkovskiy, A. N. Vinichenko, S. E. Dizhur
Publikováno v:
IOP Conference Series: Materials Science and Engineering. 475:012032
Publikováno v:
JETP Letters. 96:577-581
The temperature dependence of a zero-bias anomaly in the tunneling conductance of an Al/δ-GaAs tunneling structure with a two-dimensional electron density in the δ-layer of 3.5 × 1012 cm−2 has been investigated. It has been shown that the respec
Autor:
N. A. Khvalkovskiy, I. S. Vasil’evskii, I. V. Altukhov, A. N. Vinichenko, S. E. Dizhur, S. K. Paprotskiy, Miron S. Kagan
Publikováno v:
Физика и техника полупроводников. 52:472
AbstractElectronic transport in short-period GaAs/AlAs superlattices with resonant cavities was studied at room temperature. The evolution of tunneling current at forward and backward bias sweep was investigated. The step-like decrease in current at