Zobrazeno 1 - 6
of 6
pro vyhledávání: '"S. E. Acosta-Ortiz"'
Publikováno v:
Microelectronic Engineering. :575-581
Damage removal and defect control in As ion implanted, both metastable pseudomorphic and partially relaxed Si 1− x Ge x epilayers, were studied by double-crystal X-ray diffractometry, and were compared to those in the nonimplanted Si 1− x Ge x ep
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8ad396ac9ae861a674ad0a11d5217673
https://doi.org/10.1016/s0167-9317(99)00518-3
https://doi.org/10.1016/s0167-9317(99)00518-3
Publikováno v:
Physical Review A. 48:3002-3007
Molecular emission bands accompanying all atomic laser transitions have been observed in a cw He-Cd + hollow-cathode laser. They appear as an asymmetrical broadening around the atomic laser transitions, which can extend as far as 90 nm for the case o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ef9fa7d55af941ad1cbde88148e61f39
https://doi.org/10.1103/physreva.48.3002
https://doi.org/10.1103/physreva.48.3002
Publikováno v:
Laser Chemistry. 13:63-83
The importance of molecular complexes in gas discharge lasers has long been recognised, and indeed they are the essence in excimer lasers. For other discharge lasers operating with gas mixtures, for example metal vapour lasers, the role of molecular
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::00e5a9c618a35ee04d1521b895bf8966
https://doi.org/10.1155/1993/17687
https://doi.org/10.1155/1993/17687
Publikováno v:
Optics letters. 23(14)
Theoretical results of the use of a Mueller matrix to characterize a one-dimensional rough perfectly reflecting, single-scattering surface in a conical configuration are presented. The conical Mueller matrix (CMM) is derived from the known Mueller ma
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8f8713fa4bb70db4874fe16494b780e7
https://pubmed.ncbi.nlm.nih.gov/18087432
https://pubmed.ncbi.nlm.nih.gov/18087432
Autor:
S. E. Acosta‐Ortiz
Publikováno v:
Journal of Applied Physics. 70:3239-3241
We report an easy way to obtain the linear electro‐optic coefficients of zinc‐blende crystals from experimental results of optical anisotropies. Above‐band‐gap linear electro‐optic coefficients of GaAs (380–450 nm) are determined.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::708f8360fa39410bf6b5592f5d690419
https://doi.org/10.1063/1.349309
https://doi.org/10.1063/1.349309
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