Zobrazeno 1 - 10
of 25
pro vyhledávání: '"S. Dobrovolskiy"'
Publikováno v:
Археология евразийских степей, Vol 5, Pp 23-37 (2023)
The authors consider the content of the motif of mauling of an ungulate by a feline predator and a griffin and the form of its realization in the Scythian animal style of the Eastern European area. A hypothesis is put forward about the ties of the su
Externí odkaz:
https://doaj.org/article/35afae42d0614a33b0c9a78ab9e2aeb9
Publikováno v:
Гуманитарный вектор, Vol 17, Iss 3, Pp 89-99 (2022)
The work is devoted to the problem of the archaeological definition of the ethnos in connection with the range of questions of the genesis of the Scythians and their anthropological composition in connection with the eastern migration impulses. The
Externí odkaz:
https://doaj.org/article/22f1d10a35cd458bb60bc0d3946a4b11
Autor:
Evgenii S. Dobrovolskiy
Publikováno v:
Historia provinciae: журнал региональной истории, Vol 6, Iss 2, Pp 702-720 (2022)
The monograph under review examines the pages of life and political activities of Helmut Kohl, the Chancellor of German unity. The source base of the book includes materials from Russian and German archives, documentary collections, memoirs, and publ
Externí odkaz:
https://doaj.org/article/5430c0e32ab346cf975c020606f75056
Publikováno v:
Гуманитарный вектор, Vol 16, Iss 3, Pp 176-183 (2021)
The localization of the Scythian Gerros is still completely uncertain. The problems associated with it cover a wide range of currently unresolved topical issues due to both the state of preservation of rich burials and the lack of clear criteria fo
Externí odkaz:
https://doaj.org/article/35b52e97de554c739b84f5669fd96cde
Autor:
Andrey Georgievich Tuchin, A. V. Simonov, I. M. Morskoy, A. E. Evgrafov, V. S. Dobrovolskiy, V. A. Stepaniants, G. S. Zaslavskiy, A. V. Grushevskii
Publikováno v:
Solar System Research. 49:543-549
The main cruise phases of the spacecraft of the ExoMars-2018 mission are considered. Basic ballistic characteristics of the spacecraft operation during the cruise phase to Mars and during the phase at the planet’s surface according to the current d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bc8606c4b93e80d5d1c0bec7c5713745
https://doi.org/10.1134/s0038094615070060
https://doi.org/10.1134/s0038094615070060
Publikováno v:
Journal of Non-Crystalline Solids. 358:2295-2298
A dielectric distributed Bragg reflector (DBR) formed by four pairs of hydrogenated amorphous silicon/silicon nitride layers is used as the back reflector in thin-film silicon solar cells. The DBR was designed to perform in a broad wavelength range w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3556107c83286b1a3cf71c1f51f7ce06
https://doi.org/10.1016/j.jnoncrysol.2011.11.025
https://doi.org/10.1016/j.jnoncrysol.2011.11.025
Autor:
R.A.C.M.M. van Swaaij, Miro Zeman, S.N. Agbo, Frans D. Tichelaar, S. Dobrovolskiy, G. Wegh, Pavol Šutta
Publikováno v:
Progress in Photovoltaics: Research and Applications. 22:346-355
This contribution investigates the effect of seeding the growth of thin film microcrystalline silicon (µc-Si : H) deposited by radio frequency plasma-enhanced chemical vapor deposition on the material properties of µc-Si : H film and the device per
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::32dcdff9f5bda75f85d9e631a9285cda
https://doi.org/10.1002/pip.2274
https://doi.org/10.1002/pip.2274
Autor:
Andrey E. Yakshin, S. Dobrovolskiy, Eric Louis, Frederik Bijkerk, J. Verhoeven, Frans D. Tichelaar
Publikováno v:
Nuclear instruments and methods in physics research. Section B : Beam interactions with materials and atoms, 268(6), 560-567. Elsevier
Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions with Materials and Atoms, 268, 560-567
Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions with Materials and Atoms, 268, 560-567
Si/SiC multilayer systems for XUV reflection optics with a periodicity of 10-20 nm were produced by sequential deposition of Si and implantation of 1 key CHx+ ions. Only about 3% of the implanted carbon was transferred into the SIC, with a thin, 0.5-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5c7b33f15641b00c98b6164a007ba8f1
https://doi.org/10.1016/j.nimb.2009.12.022
https://doi.org/10.1016/j.nimb.2009.12.022
Publikováno v:
Journal of Applied Physics. 115:034512
In this contribution, we demonstrate the application temperature dependent capacitance-frequency measurements (C-f) to n-i-p hydrogenated amorphous silicon (a-Si:H) solar cells that are forward-biased. By using a forward bias, the C-f measurement can
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fd363b16d64a3fc1f4dc30778131e5e1
https://doi.org/10.1063/1.4862308
https://doi.org/10.1063/1.4862308
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