Visible Blind 4H-SiC P $^{+}$-N UV Photodiode Obtained by Al Implantation

Autor: A. Sciuto 1, M. Mazzillo 2, S. Di Franco 1, F. Roccaforte 1, G. D'Arrigo 1

Publikováno v: IEEE Photonics Journal, Vol 7, Iss 3, Pp 1-6 (2015)
IEEE PHOTONICS JOURNAL 7 (2015): 6801906-1–6801906-6. doi:10.1109/JPHOT.2015.2439955
info:cnr-pdr/source/autori:A. Sciuto 1, M. Mazzillo 2, S. Di Franco 1, F. Roccaforte 1, G. D'Arrigo 1/titolo:Visible Blind 4H-SiC P+-N UV Photodiode Obtained by Al Implantation/doi:10.1109%2FJPHOT.2015.2439955/rivista:IEEE PHOTONICS JOURNAL/anno:2015/pagina_da:6801906-1/pagina_a:6801906-6/intervallo_pagine:6801906-1–6801906-6/volume:7

This paper reports the electrooptical characteristics of ultraviolet light-sensitive 4H-SiC p+-n junction photodiodes obtained by aluminium (Al) ion implantation on low-doped n-type epilayers. A low dark current density (2 at -100 V) was measured on

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::5776a513e33eafb15fb58877776ebcca
https://ieeexplore.ieee.org/document/7124585/

Electrical characterization of trapping phenomena at SiO2/SiC and SiO2/GaN in MOS-based devices

Autor: P. Fiorenza 1, G. Greco 1, M. Vivona 1, F. Giannazzo 1, S. Di Franco 1, A. Frazzetto 2, A. Guarnera 2, M. Saggio 2, F. Iucolano 2, A. Patti 2, F. Roccaforte 1

Publikováno v: Physica status solidi. A, Applications and materials science
214 (2017): 1600366-1–1600366-7. doi:10.1002/pssa.201600366
info:cnr-pdr/source/autori:P. Fiorenza 1, G. Greco 1, M. Vivona 1, F. Giannazzo 1, S. Di Franco 1, A. Frazzetto 2, A. Guarnera 2, M. Saggio 2, F. Iucolano 2, A. Patti 2, F. Roccaforte 1/titolo:Electrical characterization of trapping phenomena at SiO2%2FSiC and SiO2%2FGaN in MOS-based devices/doi:10.1002%2Fpssa.201600366/rivista:Physica status solidi. A, Applications and materials science (Print)/anno:2017/pagina_da:1600366-1/pagina_a:1600366-7/intervallo_pagine:1600366-1–1600366-7/volume:214

In this paper, some aspects of the electrical characterization of trapping phenomena occurring at interfaces between insulators and wide band semiconductors (WBG) are presented, with a focus on the SiO2/SiC and SiO2/GaNsystems. In particular, time re

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=cnr_________::e42244b78b02d9a721090b69f8a95f71

Effect of temperature–bias annealing on the hysteresis and subthreshold behavior of multilayer MoS2 transistors

Autor: F. Giannazzo 1, G. Fisichella 1, A. Piazza 1, 2, 3, S. Di Franco 1, G. Greco 1, S. Agnello 2, F. Roccaforte 1

Publikováno v: Physica status solidi. Rapid research letters
info:cnr-pdr/source/autori:F. Giannazzo 1, G. Fisichella 1, A. Piazza 1,2,3, S. Di Franco 1, G. Greco 1, S. Agnello 2, F. Roccaforte 1/titolo:Effect of temperature-bias annealing on the hysteresis and subthreshold behavior of multilayer MoS2 transistors/doi:10.1002%2Fpssr.201600209/rivista:Physica status solidi. Rapid research letters (Print)/anno:2016/pagina_da:797/pagina_a:801/intervallo_pagine:797–801/volume:10

The transfer characteristics (ID-VG) of multilayers MoS2 transistors with a SiO2/Si backgate and Ni source/drain contacts have been measured on as-prepared devices and after annealing at different temperatures (T-ann from 150 degrees C to 200 degrees

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bad03450a699c5094d0e1b7ba3e13cfe
http://hdl.handle.net/10447/225204

Atomic layer deposition of Al2O3 thin films for metal insulator semiconductor applications on 4H-SiC

Autor: E. Schiliro 1, S. Di Franco 1, P. Fiorenza 1, C. Bongiorno 1, H. Gargouri 2, M. Saggio 3, R. Lo Nigro 1, F. Roccaforte 1

Publikováno v: Materials science forum 858 (2016): 685–688. doi:10.4028/www.scientific.net/MSF.858.685
info:cnr-pdr/source/autori:E. Schiliro 1, S. Di Franco 1, P. Fiorenza 1, C. Bongiorno 1, H. Gargouri 2, M. Saggio 3, R. Lo Nigro 1, F. Roccaforte 1/titolo:Atomic layer deposition of Al2O3 thin films for metal insulator semiconductor applications on 4H-SiC/doi:10.4028%2Fwww.scientific.net%2FMSF.858.685/rivista:Materials science forum/anno:2016/pagina_da:685/pagina_a:688/intervallo_pagine:685–688/volume:858

This work reports on the growth and characterization of Al2O3 films on 4H-SiC, by Plasma Enhanced-Atomic Layer Deposition (PE-ALD). Different techniques were used to investigate the morphological, structural and electrical features of the Al2O3 films

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=cnr_________::a7354144c4c95b905e68ba237f874000
https://publications.cnr.it/doc/357650

Mechanism of Ohmic contact formation in Ti/Al bilayers on AlGaN/GaN heterostructures with a different crystalline quality

Autor: G. Greco 1, F. Iucolano 2, C. Bongiorno 1, S. Di Franco 1, F. Giannazzo 1, M. Leszczy?ski 3, F. Roccaforte 1

Publikováno v: 38th Workshop on Compound Semiconductors Devices and Integrated Circuits (WOCSDICE2014), pp. 95–96, Delphi (Greece), 15-18 June, 2014
info:cnr-pdr/source/autori:G. Greco 1, F. Iucolano 2, C. Bongiorno 1, S. Di Franco 1, F. Giannazzo 1, M. Leszczy?ski 3, F. Roccaforte 1/congresso_nome:38th Workshop on Compound Semiconductors Devices and Integrated Circuits (WOCSDICE2014)/congresso_luogo:Delphi (Greece)/congresso_data:15-18 June, 2014/anno:2014/pagina_da:95/pagina_a:96/intervallo_pagine:95–96

In this paper, the electrical and structural properties of Ti/Al Ohmic contacts have been investigated comparing AlGaN/GaN heterostructures with different dislocation density. The annealing temperature leading to Ohmic be-haviour is related to the ma

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=cnr_________::daa23188f865540e5f595b5d92e1e754
https://publications.cnr.it/doc/284906