Zobrazeno 1 - 10
of 83
pro vyhledávání: '"S. Deubert"'
Autor:
S. Deubert, W. Kaiser, Alfred Forchel, Johann Peter Reithmaier, Andre Somers, R. Schwertberger
Publikováno v:
Journal of Crystal Growth. 278:346-350
Self-assembled quantum dash (QDash) lasers based on InP with an emission wavelength of about 1.5 μm were grown by molecular beam epitaxy with solid-state sources. Two different approaches were investigated to further extend the broad gain bandwidth
Autor:
Alfred Forchel, S. Deubert, Johann Peter Reithmaier, Olivier Parillaud, D. Rodriguez, Ignacio Esquivias, Michel Calligaro, Michel Krakowski
Publikováno v:
IEEE Journal of Quantum Electronics. 41:117-126
An experimental comparative study of the gain, index variation, and linewidth enhancement factor in 980-nm quantum-well (QW) and quantum-dot (QD) lasers structures, designed for high power applications, is presented. The gain spectra of the QW lasers
Autor:
Alfred Forchel, Brian Corbett, Johann Peter Reithmaier, Wolfgang Kaiser, S. Deubert, P. Lambkin, James O'Callaghan
Publikováno v:
IEEE Photonics Technology Letters. 19:916-918
Large spot size ridge waveguide lasers utilizing a low modal gain single quantum dot layer emitting at 925 nm were designed and fabricated. Ridge waveguides with width
Autor:
F. Klopf, Michel Calligaro, S. Deubert, Sophie-Charlotte Auzanneau, Johann Peter Reithmaier, Alfred Forchel, Michel Krakowski
Publikováno v:
Applied Physics Letters. 84:2238-2240
High brightness (2 W with M2=3.4) is demonstrated at 980 nm using a gain-guided tapered GaInAs/(Al)GaAs quantum-dot laser. A remarkable low temperature shift (0.09 nm/K) of the emission wavelength is observed. Moreover, at 20 °C, the emission wavele
Publikováno v:
Applied Physics Letters. 81:217-219
The influence of several design parameters on the temperature stability of the emission wavelength of 980 nm GaInAs/(Al)GaAs quantum-dot lasers was studied. The results obtained agree well with a simplified model based on the inhomogeneously broadene
Bulk temperature mapping of broad area quantum dot lasers: modeling and micro-thermographic analysis
Autor:
Brian Corbett, Jayanta Mukherjee, John G. McInerney, S. Deubert, Jens W. Tomm, Julien LeClech, Mathias Ziegler, Johann Peter Reithmaier, Alfred Forchel
Publikováno v:
SPIE Proceedings.
For novel devices such as quantum dot lasers, the usual thermal characterization using temperature induced wavelength shift is ineffective due to weak thermal shift of the inhomogeneously broadened gain-peak. This calls for new thermal characterizati
Autor:
Mathias Ziegler, Thomas Elsaesser, Wlodzimierz Nakwaski, Johann Peter Reithmaier, Jens W. Tomm, John G. Mclnerney, Alfred Forchel, Jean-Pierre Landesman, Julien LeClech, Brian Corbett, S. Deubert, Jayanta Mukherjee, Robert P. Sarzała
Publikováno v:
Journal of Applied Physics
Journal of Applied Physics, American Institute of Physics, 2009, 105 (3), pp.014502. ⟨10.1063/1.3055356⟩
Journal of Applied Physics, American Institute of Physics, 2009, 105 (3), pp.014502. ⟨10.1063/1.3055356⟩
International audience; We analyze the effect of propagating infrared thermal radiation within a diode laser on its thermal image taken by a thermocamera. A ray-tracing analysis shows that this effect substantially influences image formation on a spa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::55f6f68bb3a67e8e2249db13241f1b25
https://hdl.handle.net/10468/4218
https://hdl.handle.net/10468/4218
Autor:
Wolfgang Kaiser, Grzegorz Sęk, Martin Kamp, Johann Peter Reithmaier, Stefan Reitzenstein, Andreas Löffler, Alfred Forchel, Sven Höfling, C. Hofmann, Andre Somers, S. Deubert
Publikováno v:
SPIE Proceedings.
A brief review is given about recent advances of our research group related to nanostructured semiconductors for optoelectronic applications. Semiconductor nanostructures were realised by mainly two techniques, i.e., direct patterning by lithography
Publikováno v:
CLEO/Europe. 2005 Conference on Lasers and Electro-Optics Europe, 2005..
In this paper the device properties of single mode lasers based on this new quantum-dash material will be presented. The laser structures were grown by solid-source MBE. They consist of a 1.7 /spl mu/m top InAlAs cladding and a 400 nm thick waveguide
Publikováno v:
2006 Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference.
High power 915 nm quantum dot lasers with increased temperature stability of the emission wavelength (≪ 0.1 nm/K) were realized. By application of a lateral grating to tapered lasers a single mode emission of ≫ 400 mW was achieved.