Zobrazeno 1 - 10
of 25
pro vyhledávání: '"S. Dellier"'
Publikováno v:
2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS).
All the players in RF industry are looking to develop high efficiency circuits, and are willing to invest heavily to achieve this target. Increasing power efficiency enables decreasing power consumption, thus reducing the use of the resources provide
Publikováno v:
2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS).
Odd-mode parametric oscillations are a common cause of malfunctioning in power amplifiers. A very typical example of odd mode oscillation is the showing up of a spurious component at the fundamental frequency divide-by-two for some input power values
Publikováno v:
2016 11th European Microwave Integrated Circuits Conference (EuMIC).
High power amplifier design always requires a compromise between performance and stability. The goal is to design an amplifier that is stable under all operating conditions without sacrificing too much performance by the introduction of stability imp
Autor:
S. Dellier, Raymond Quéré, C. Duperrier, Luc Lapierre, J. Rousset, Michel Campovecchio, A. Mallet
Publikováno v:
International Journal of RF and Microwave Computer-Aided Engineering. 13:293-305
This article deals with the development of a design assistance environment for microwave circuits and, especially, its first module dedicated to microwave power amplifiers. This tool does not intend to simulate nonlinear circuits, since CAD tools are
Publikováno v:
2014 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications (PAWR).
This paper describes the development of a high-efficiency S-band power amplifier (PA) with power flexibility, based on packaged GaN devices. This amplifier aims to demonstrate the highest power added efficiency (PAE) for a flexible output power from
Publikováno v:
2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS).
This paper aims to depict a non linear and electrothermal model of AlGaN/GaN HEMT devices. This model was especially developed in order to operate in switch mode but it can also be used for amplifiers design. For this purpose, a particular attention
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques
IEEE Transactions on Microwave Theory and Techniques, Institute of Electrical and Electronics Engineers, 2012, 60 (6), pp.1817-1828. ⟨10.1109/TMTT.2012.2191305⟩
IEEE Transactions on Microwave Theory and Techniques, Institute of Electrical and Electronics Engineers, 2012, 60 (6), pp.1817-1828. ⟨10.1109/TMTT.2012.2191305⟩
International audience; This paper presents a complete validation of the new behavioral model called the multiharmonic Volterra (MHV) model for designing wideband and highly efficient power amplifiers with packaged transistors in computer-aided desig
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a9349b3ded3579cbbf78d2c9e26040df
https://hal-unilim.archives-ouvertes.fr/hal-00911147
https://hal-unilim.archives-ouvertes.fr/hal-00911147
Autor:
E. Gatard, C. Maziere, S. Dellier, Wilfried Demenitroux, Raymond Quéré, Cedrick Saboureau, M. Campovecchio
Publikováno v:
Microwave Symposium Digest (MTT), 2011 IEEE MTT-S International
International IEEE MTT Symposium Digest
International IEEE MTT Symposium Digest, Jun 2011, Baltimore, United States. pp.1-4, ⟨10.1109/MWSYM.2011.5972829⟩
International IEEE MTT Symposium Digest
International IEEE MTT Symposium Digest, Jun 2011, Baltimore, United States. pp.1-4, ⟨10.1109/MWSYM.2011.5972829⟩
International audience; This paper presents a new macro modeling methodology for solid-state amplifiers (SSAs) and packaged transistors used in radar systems. The model topology is based on the principle of the harmonic superposition recently introdu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::346b286eb5142d5317cf0b14c2932bc0
https://hal.archives-ouvertes.fr/hal-00702662
https://hal.archives-ouvertes.fr/hal-00702662
Publikováno v:
2010 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS).
This paper deals with a scalable and distributed electro-thermal model of AlGaN/GaN HEMT. This model has been especially developed for multi-fingers and large periphery transistors. Quasi isothermal measurements by means of pulsed I(V) and pulsed [S]
Autor:
Raymond Quéré, S. Vuye, S. Dellier, D. de la Grandiere, M. Campovecchio, Fabrice Blache, J.R. Burie
Publikováno v:
IEEE MTT-S, International Symposium on Microwave Theory and Techniques
IEEE MTT-S, International Symposium on Microwave Theory and Techniques, Jun 2003, Philadelphia, PA, United States. pp. 1347-1350, ⟨10.1109/MWSYM.2003.1212620⟩
IEEE MTT-S, International Symposium on Microwave Theory and Techniques, Jun 2003, Philadelphia, PA, United States. pp. 1347-1350, ⟨10.1109/MWSYM.2003.1212620⟩
For the next generation of high-speed optical communications (4/spl times/40Gbit/s OTDM), the availability of very short pulse sources is crucial. This work deals with optical pulse sources using electro-absorption modulators (EAM). With the aim of m