Zobrazeno 1 - 10
of 27
pro vyhledávání: '"S. D. Simeonov"'
Publikováno v:
IEEE Transactions on Electron Devices. 59:1738-1744
The statistical variability of the static noise margin of a six-transistor bulk complementary metal-oxide-semiconductor static random access memory (SRAM) cell due to random doping fluctuations (RDFs) is investigated via 3-D technology computer-aided
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9ceaa218f58e9e53695509852d8a0711
https://doi.org/10.1109/ted.2012.2189860
https://doi.org/10.1109/ted.2012.2189860
Autor:
Zhiqiang Tan, U von Matt, Andrey B. Kucherov, Pratheep Balasingam, K. El Sayed, I. Avci, M. D. Johnson, B. Polsky, A R Saha, S. Tian, S. D. Simeonov, Luis Villablanca, E. Lyumkis
Publikováno v:
IEEE Transactions on Electron Devices. 58:1189-1196
In this paper, we study the impacts of proximity effects on the electrical characteristics Id-Vg and the static noise margin of a six-transistor (6T) bulk complementary metal-oxide-semiconductor (MOS) static random access memory (SRAM) cell using 3-D
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4e2c42920a0194c524046d1970177267
https://doi.org/10.1109/ted.2011.2109003
https://doi.org/10.1109/ted.2011.2109003
Autor:
Zudian Qin, Mankoo Lee, S. D. Simeonov, K. El Sayed, I. Avci, Yong-Seog Oh, Pratheep Balasingam, Dipu Pramanik
Publikováno v:
2013 IEEE International Reliability Physics Symposium (IRPS).
A physically based simulation methodology provides fast and practical EM lifetime prediction. We identified an “EM-aware” region to define the length dependence of Cu-lines under high current stress. For eventual calibration of 2× nm node Cu-lin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::267088c8c04e5a02dab0cc8c102269f1
https://doi.org/10.1109/irps.2013.6532079
https://doi.org/10.1109/irps.2013.6532079
Autor:
K. El-Sayed, I. Avci, W. Zhou, Yong-Seog Oh, Pratheep Balasingam, M. Zhu, Andrey B. Kucherov, Zudian Qin, M. D. Johnson, S. D. Simeonov, S. Tian, B. Polsky, V. Chawla, B. Mishra, Xiaopeng Xu, S. Li
Publikováno v:
2012 IEEE International Interconnect Technology Conference.
The reliability of complex interconnect structures at all levels of the chip integration hierarchy has become a major concern due to the use of fine feature sizes, diverse materials, and complex 3D architectures. Reliability issues range from stress
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::02a2d49097020e1178e553a865ff19ef
https://doi.org/10.1109/iitc.2012.6251575
https://doi.org/10.1109/iitc.2012.6251575
Autor:
S. D. Simeonov, P. P. Kircheva
Publikováno v:
Journal of Raman Spectroscopy. 21:55-63
The influence of thermally excited vibrations on vibronic spectra (absorption, CARS excitation profile and resonance background) has been modelled for polyatomic molecules in solution. It is shown that for a model describing some polymethine compound
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::af55854e99e7eebb6bdbe8c937473ca2
https://doi.org/10.1002/jrs.1250210111
https://doi.org/10.1002/jrs.1250210111
Autor:
I. Avci, B. Polsky, Zhiqiang Tan, Andrey B. Kucherov, N. Strecker, J. Gharib, M. D. Johnson, S. D. Simeonov, O. Penzin, E. Lyumkis, G. Kiralyfalvi, K. El Sayed, K. Kells, V. Koltyzhenkov, V. Rao, W. Fichtner, Luis Villablanca, Pratheep Balasingam
Publikováno v:
2006 16th Biennial University/Government/Industry Microelectronics Symposium.
Shrinking feature sizes, novel device designs as well as stress engineering increase the need for three- dimensional process and device simulations. We present several application examples for full 3D process and device simulations using Sentaurus TC
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fc1c638f1ed9e536bdf49489d961deff
https://doi.org/10.1109/ugim.2006.4286350
https://doi.org/10.1109/ugim.2006.4286350
Publikováno v:
Kosmicheskaia biologiia i aviakosmicheskaia meditsina. 25(5)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::a502d4a2f6a5c350eecac2c9a672f432
https://pubmed.ncbi.nlm.nih.gov/8577147
https://pubmed.ncbi.nlm.nih.gov/8577147
Autor:
S. D. Simeonov, P. P. Kircheva
Publikováno v:
Journal of Raman Spectroscopy. 17:363-367
Coherent Raman spectra for resonance pumping conditions and a three-frequency variant were claculated for polyatomic molecules. A model based on density of states and displaced harmonic oscillators was used. The contributions of different intermediat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4476fc719d18045bf5db37685a2b8aa5
https://doi.org/10.1002/jrs.1250170413
https://doi.org/10.1002/jrs.1250170413
Autor:
P. P. Kircheva, S. D. Simeonov
Publikováno v:
Journal of Raman Spectroscopy. 18:435-442
Model calculations of coherent Raman spectra under resonance pumping conditions for polyatomic molecules have been carried out. The influence of the resonance background, which originates from the ‘extra’ resonance term of the resonance vibronic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ca4098b126fa1b8dc7aebc2f9e7924c0
https://doi.org/10.1002/jrs.1250180611
https://doi.org/10.1002/jrs.1250180611
Autor:
S. D. Simeonov, P. P. Kircheva
Publikováno v:
Journal of Raman Spectroscopy. 16:308-311
In the treatment of absorption spectra and Raman excitation profiles of polyatomic molecules, relaxation constants appear as ‘soft’ parameters. It is shown that the spectra of non-linear Raman scattering under resonance pumping conditions are sen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f26f7bb0e803b43eb20d35883c0d56ad
https://doi.org/10.1002/jrs.1250160504
https://doi.org/10.1002/jrs.1250160504