Zobrazeno 1 - 10
of 16
pro vyhledávání: '"S. D. Mukherjee"'
Autor:
G.M. Peake, Gregory A. Vawter, Betty Salters, Walter J. Zubrzycki, Terry Hargett, S. D. Mukherjee, C. Alford
Publikováno v:
Optical Amplifiers and Their Applications/Integrated Photonics Research.
We present a new surface treatment that controls selective area quantum well intermixing. A CHF3/O2 plasma in an RIE system is used to form a polymer on localized areas that prevents intermixing.
Autor:
P. M. Capani, S. D. Mukherjee, P. Zwicknagl, J. D. Berry, H. T. Griem, G. W. Wicks, L. Rathbun, L. F. Eastman
Publikováno v:
Journal of Electronic Materials. 15:185-191
Very low resistance alloyed NiGeAuAgAu ohmic contacts have been fabricated to the Al0.48In0.52As/Ga0.47In0.53As heterosystem. A thin capping layer of GalnAs was used to inhibit Al oxidation at the surface. Unlike NiGeAgAu ohmic metallization containi
Autor:
M. W. Thompson, S. D. Mukherjee
Publikováno v:
Radiation Effects. 56:159-177
The theories of trajectory focusing (Mukherjee and Thompson, Paper I, Ref. 1) are used to interpret channelling experiments with 1.7 MeV H+ incident near the ⟨100⟩ axis of MgO. Quantitative explanations are found for the following phenomena: devi
Publikováno v:
Journal of Vacuum Science and Technology. 17:904-910
The thermal stability of vacuum deposited thin metallic layers (namely Ta, Cr, Cr–Au, Mo, Mo–Au and W) on GaAs for short (1 h) and long (∠150 h) thermal anneals at temperatures up to 550°C have been studied using Rutherford backscattering of h
Publikováno v:
Journal of The Electrochemical Society. 126:1047-1053
Interdiffusion and degradation of Cr/Pt/Ag multiple metallization layers for silicon IMPATT diode applications have been studied experimentally using Rutherford backscattering analysis, secondary ion mass spectrometry, and scanning electron microscop
Autor:
M. W. Thompson, S. D. Mukherjee
Publikováno v:
Radiation Effects. 55:223-233
A new theory describing the focusing of channelled ion trajectories in the transverse plane is presented which rests on the energy dependence of the angle of scattering by a single row. Conditions are identified in which trajectories are focused in t
Publikováno v:
Indian Journal of Otolaryngology. 17:163-170
Publikováno v:
Journal of Vacuum Science and Technology. 16:138-140
A series of metals (namely Pt, Ni, Al, Cr, Ti, Ta, Mo, and W) were considered and investigated metallurgically as possible candidates for Schottky barrier metals for high‐power GaAs IMPATT diode and FET applications. Interdiffusion, compound format
Publikováno v:
Indian Journal of Otolaryngology. 17:180-182
Publikováno v:
Journal of the Indian Medical Association. 66(6)