Zobrazeno 1 - 10
of 13
pro vyhledávání: '"S. D. Lester"'
Publikováno v:
Applied Physics Letters. 66:1249-1251
The electrical, optical, and structural properties of light emitting diodes (LEDs) fabricated from the III–V nitride material system have been studied. LEDs with external quantum efficiencies as high as 4% were characterized by transmission electro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e47526d47509d19c3f8d20dcfe1b5d4e
https://doi.org/10.1063/1.113252
https://doi.org/10.1063/1.113252
Publikováno v:
Applied Physics Letters. 58:2012-2014
Very high brightness In(x)Ga(1−x)P light‐emitting diodes (LEDs) have been fabricated on GaP substrates by hydride vapor phase epitaxy. LEDs operating at wavelengths from 650 nm (red) to 565 nm (green) have been demonstrated. The brightest encapsu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b498216f527924cdc5e09d5474df0830
https://doi.org/10.1063/1.105024
https://doi.org/10.1063/1.105024
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 11:915
Heavily C‐doped p‐type GaAs epitaxial films have been grown using carbon tetrabromide (CBr4) as a dopant source in both gas source molecular‐beam epitaxy (GSMBE) and molecular‐beam epitaxy (MBE). It was found that CBr4 has a great potential a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d577393fde752b93d0cbe330d5d09817
https://doi.org/10.1116/1.586738
https://doi.org/10.1116/1.586738
Publikováno v:
Journal of Applied Physics. 60:4209-4214
The effects of gas ambient changes on the photoluminescence (PL) intensity and the conductivity of chemically cleaned (100) InP and GaAs have been investigated. The room‐temperature PL intensity of n‐type, p‐type, and Fe‐doped semi‐insulati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::69864a996cb9b32b2bd37546857905bc
https://doi.org/10.1063/1.337508
https://doi.org/10.1063/1.337508
Publikováno v:
Journal of Applied Physics. 63:853-857
Self‐absorption is shown to dramatically distort both the intensity and spectral distribution of low‐temperature band‐edge photoluminescence in InP. The selective reabsorption of bound‐exciton emission is shown to give rise to artifactual lum
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9888d501ff5fd530746e512dee1ca55e
https://doi.org/10.1063/1.340025
https://doi.org/10.1063/1.340025
Publikováno v:
Journal of Applied Physics. 62:2950-2954
Recombination involving radiative surface states on InP has been studied in detail by low‐temperature photoluminescence. A variety of surface treatments, including etching in HF‐based solutions, is found to give rise to a luminescence band locate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bdd3f3d66be7d0b7c54f5e02b2e4ba5a
https://doi.org/10.1063/1.339379
https://doi.org/10.1063/1.339379
Publikováno v:
Journal of The Electrochemical Society. 134:2888-2892
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::74aec3d958e36539a5f4cd49a8e49b71
https://doi.org/10.1149/1.2100308
https://doi.org/10.1149/1.2100308
Publikováno v:
Journal of Applied Physics. 61:4598-4602
Low‐temperature photoluminescence is used to study optical transitions in InP which arise from moderate‐temperature annealing or dielectric encapsulation. A total of seven shallow emission lines appear in annealed or encapsulated InP that are not
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::634e44dffa075c42f7d1d2eb26feed5f
https://doi.org/10.1063/1.338368
https://doi.org/10.1063/1.338368
Publikováno v:
Applied Physics Letters. 52:474-476
An examination of low‐temperature photoluminescence from chemically thinned InP illustrates the effect of multiple absorption and reemission of photons in bulk liquid‐encapsulated Czochralski grown material. Luminescence spectra show that such ph
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::88205e75981380cae0de5c67f6002c6b
https://doi.org/10.1063/1.99448
https://doi.org/10.1063/1.99448
Publikováno v:
Journal of Applied Physics. 61:2072-2074
We have observed radiative surface recombination centers on InP by low‐temperature photoluminescence. The luminescence band is observed only after etched or annealed surfaces are treated with hydrofluoric acid (HF), and is not found after rinsing i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b0323cc17c1bfc261bcfc8914efd9abf
https://doi.org/10.1063/1.338009
https://doi.org/10.1063/1.338009