Zobrazeno 1 - 1
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pro vyhledávání: '"S. D. Hossain"'
Publikováno v:
Journal of Electronic Materials. 22:689-694
Growth of thermal oxide on silicon implanted with carbon at low energies is studied and electrical characteristics of the resulting SiO2-Si structures are evaluated. After excluding the effect of surface damage on the oxide growth kinetics, it was de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9876a27398efd0cabd9ca5ce650dbc5c
https://doi.org/10.1007/bf02666419
https://doi.org/10.1007/bf02666419
