Zobrazeno 1 - 10
of 20
pro vyhledávání: '"S. D. Fedotov"'
Publikováno v:
Известия высших учебных заведений России: Радиоэлектроника, Vol 0, Iss 5, Pp 28-35 (2017)
Heteroepitaxial silicon-on-sapphire (SOS) wafers with a layer thickness of 200 and 600 nm were fabricated by the vapor phase epitaxy with monosilane as a precursor. The assessment of structural quality of silicon-sapphire interface was carried out by
Externí odkaz:
https://doaj.org/article/9098dd06b70b4ba6af8e195c1e75dd1f
Publikováno v:
Mechanics of Solids. 55:84-89
—In this article, we studied the growth characteristics of AlN epitaxial layers on 3С-SiC/Si(111) templates at various values of atomic flux of aluminum at a constant growth temperature and a constant flow of atomic nitrogen. The AFM method was us
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2e8abdad72b462e873bff254e9c1c02c
https://doi.org/10.3103/s0025654420010045
https://doi.org/10.3103/s0025654420010045
Publikováno v:
Physics of the Solid State. 61:2353-2358
The main technological problem in the manufacture of electronics on silicon-on-sapphire (SOS) structures is the high density of defects in silicon-on-sapphire layers. The modern method of obtaining ultrathin SOS structures using solid-phase epitaxial
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::96a829eacf51c4d806c0ef3b6f7f197f
https://doi.org/10.1134/s1063783419120126
https://doi.org/10.1134/s1063783419120126
Publikováno v:
Semiconductors. 53:2016-2023
The complexity of optimizing the technology of heteroepitaxy is an important limiting factor of the application of silicon-on-sapphire (SOS) structures. In order to eliminate this technological barrier, we study the gas-phase formation of the initial
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5b68d956640ce8dbb2a3adb81cb4ef10
https://doi.org/10.1134/s1063782619150065
https://doi.org/10.1134/s1063782619150065
Autor:
Alexey V. Redkov, Sergey P. Timoshenkov, V.N. Statsenko, S. A. Kukushkin, A. S. Grashchenko, A.V. Osipov, S. D. Fedotov, N. A. Feoktistov, E.M. Sokolov
Publikováno v:
Reviews on Advanced Materials Science, Vol 57, Iss 1, Pp 82-96 (2018)
A fundamentally new method for synthesis of thick (200-400 nm) epitaxial films of silicon carbide on single-crystal Al2O3 substrates is proposed. The method develops the previously discovered method of topochemical substitution of atoms during the tr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1cab88be62071ccb45330a34141c2965
https://doaj.org/article/24f6b82858bf409a8bf4483d74247d4b
https://doaj.org/article/24f6b82858bf409a8bf4483d74247d4b
Publikováno v:
Semiconductors. 51:1692-1697
The surface of silicon-on-sapphire (SOS) epitaxial layers is studied by atomic-force microscopy and the UV (ultraviolet) scattering method. X-Ray diffraction analysis of the SOS layers is carried out. The silicon-sapphire transition region is studied
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1c010a14caca49fe344d445d0398b59e
https://doi.org/10.1134/s1063782617130127
https://doi.org/10.1134/s1063782617130127
Publikováno v:
International Conference on Micro- and Nano-Electronics 2018.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c099d744d17779a99de19ec60a3d8b12
https://doi.org/10.1117/12.2522109
https://doi.org/10.1117/12.2522109
Publikováno v:
International Conference on Micro- and Nano-Electronics 2018.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b30a5a1d88e396e23e1a48bbc43dee60
https://doi.org/10.1117/12.2521959
https://doi.org/10.1117/12.2521959
Publikováno v:
2018 IEEE Conference of Russian Young Researchers in Electrical and Electronic Engineering (EIConRus).
High-resistivity silicon layers were deposited on different high-doped wafers with arsenic, antimony and boron doping. The Si-layers were formed at 950–1050 °C with various vapor-gas mixture composition: SiH 4 , SiH 4 +SiCl 4 , SiH 4 +SiHCl 3 , Si
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e132cd200ecdab14b2633b654d5f1138
https://doi.org/10.1109/eiconrus.2018.8317417
https://doi.org/10.1109/eiconrus.2018.8317417
Publikováno v:
2018 IEEE Conference of Russian Young Researchers in Electrical and Electronic Engineering (EIConRus).
Thin (300–600 nm) heteroepitaxial silicon layers were deposited on R-plane sapphire wafers via hydride-chloride CVD technique using SiH 4 and SiCl 4 gas-vapor mixture with PH 3 doping gas diluted by H 2 . Obtained layers were studied with AFM, XRD,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::228729a0dd232b9774866cb2816af79f
https://doi.org/10.1109/eiconrus.2018.8317409
https://doi.org/10.1109/eiconrus.2018.8317409