Výsledky vyhledávání

Ni2Si/4H-SiC Schottky photodiodes for ultraviolet light detection

Autor: M. Mazzillo 1, A. Sciuto 2, F. Roccaforte 2, C. Bongiorno 2, R. Modica 1, S. Marchese 1, P. Badala 1, D. Cali 1., F. Patane 1, B. Carbone 1, A. Russo 1, S. Coffa 1

Publikováno v: Materials science forum 858 (2016): 1015–1018. doi:10.4028/www.scientific.net/MSF.858.1015
info:cnr-pdr/source/autori:M. Mazzillo 1; A. Sciuto 2; F. Roccaforte 2; C. Bongiorno 2; R. Modica 1; S. Marchese 1; P. Badala 1; D. Cali 1.; F. Patane 1; B. Carbone 1; A. Russo 1; S. Coffa 1/titolo:Ni2Si%2F4H-SiC Schottky photodiodes for ultraviolet light detection/doi:10.4028%2Fwww.scientific.net%2FMSF.858.1015/rivista:Materials science forum/anno:2016/pagina_da:1015/pagina_a:1018/intervallo_pagine:1015–1018/volume:858

Ultraviolet (UV) monitoring is of great interest in the healthcare field to prevent excessive UV exposure risks. In the last years silicon carbide (SiC) has emerged as a suitable material for the fabrication of UV detectors. In this paper we propose

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=cnr_________::90d0b011a0e171050c34ad9b01092108

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Design and Electro-Optical Characterization of Si-Based Resonant Cavity Light Emitting Devices

Autor: S. Leonardi, A. Muscara, S. Coffa, M. E. Castagna

Publikováno v: IEEE Journal of Quantum Electronics. 47:1362-1368

The fabrication and characterization of electrically pumped silicon/silicon dioxide (Si/SiO2) Fabry-Perot microcavities is reported. The active region of these devices consists of an Er-implanted silicon-rich oxide (SRO:Er) film placed in the center

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::aeec7259b1dab26fe717fe095418d7ac
https://doi.org/10.1109/jqe.2011.2166534

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Ligth from silicon [LED

Autor: S. Coffa

Publikováno v: IEEE Spectrum. 42:44-49

This paper discusses the current efforts to develop an electrically powered silicon laser for the fabrication of light emitting diodes (LED). Researchers have been pushing two strategies in their quest to get light out of silicon. One scheme is based

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::4cc6f245f80ef5c41f6f6e46c83ab3d6
https://doi.org/10.1109/mspec.2005.1515960

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Ion implantation of rare earth ions for light emitters

Autor: F. Lu, Shaohong Wang, Ch. Buchal, S. Coffa, R. Carius

Publikováno v: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 190:40-46

We discuss the excitation and deexcitation processes for solid state optical emitters. At present, there is considerable interest in depositing a material system, which is compatible to silicon microelectronics processing and which emits electrolumin

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::07c89e84caea7af27022cbad39a04e76
https://doi.org/10.1016/s0168-583x(01)01171-5

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DLTS and PL studies of proton radiation defects in tin-doped FZ silicon

Autor: M. Kokkoris, Eddy Simoen, Paul Clauws, C. Claeys, E. Kossionides, V Privitera, S Coffa, G. Fanourakis, A. Nylandsted Larsen

Publikováno v: Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms
186 (2002): 19–23. doi:10.1016/S0168-583X(01)00911-9
info:cnr-pdr/source/autori:Simoen E., Claeys C., Privitera V., Coffa S., Kokkoris M., Kossionides E., Fanourakis G., Larsen A.N., Clauws P./titolo:DLTS and PL studies of proton radiation defects in tin-doped FZ silicon/doi:10.1016%2FS0168-583X(01)00911-9/rivista:Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (Print)/anno:2002/pagina_da:19/pagina_a:23/intervallo_pagine:19–23/volume:186

In this paper, deep level transient spectroscopy (DLTS) is applied to study the deep levels in tin-doped and high-energy proton irradiated n-type float-zone (FZ) silicon. The results will be compared with irradiated tin-free FZ reference material, in

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f75adba3e60246e9886f5a7a43aa68c2
https://doi.org/10.1016/s0168-583x(01)00911-9

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High-energy proton radiation induced defects in tin-doped n-type silicon

Autor: C. Claeys, Eddy Simoen, V Privitera, S Coffa, Paul Clauws, A. Nylandsted Larsen

Publikováno v: Physica B: Condensed Matter. :477-480

The formation of radiation defects in Sn-doped Float-Zone (FZ) and Czochralski (Cz) n-type silicon after a high-energy proton irradiation is studied by a combination of Deep Level Transient Spectroscopy (DLTS) and Photoluminescence (PL). Besides the

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::44ed7ac12cb19ee52b4eabfce0234dc6
https://doi.org/10.1016/s0921-4526(01)00746-3

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Elektronická kniha

Crucial Issues in Semiconductor Materials and Processing Technologies

Autor: S. Coffa, F. Priolo, Emanuele Rimini, J.M. Poate

Semiconductors lie at the heart of some of the most important industries and technologies of the twentieth century. The complexity of silicon integrated circuits is increasing considerably because of the continuous dimensional shrinkage to improve ef

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