Zobrazeno 1 - 10
of 106
pro vyhledávání: '"S. Cheylan"'
Autor:
José Miguel Asensi, Sergi Galindo, S. Cheylan, Joaquim Puigdollers, R. Pacios, Ramon Alcubilla, Pedro A. Ortega, Cristobal Voz
Publikováno v:
Recercat. Dipósit de la Recerca de Catalunya
instname
UPCommons. Portal del coneixement obert de la UPC
Universitat Politècnica de Catalunya (UPC)
instname
UPCommons. Portal del coneixement obert de la UPC
Universitat Politècnica de Catalunya (UPC)
This work studies the charge carrier collection efficiency in organic bulk-heterojunction solar cells based on polymer:fullerene blends. An equivalent circuit with a specific recombination term is proposed to describe the behavior of this type of dev
Publikováno v:
Organic Electronics. 12:818-822
Bilayer Cu–Ni transparent electrodes were room-temperature grown on glass by sputtering technique and used as anodes for polymer light-emitting diodes (PLEDs). The bilayer electrode structure allows combining the low sheet resistance and high trans
Autor:
Ramon Alcubilla, S. Cheylan, Cristobal Voz, Albert Orpella, A. Marsal, Joaquim Puigdollers, M. Della Pirriera
Publikováno v:
UPCommons. Portal del coneixement obert de la UPC
Universitat Politècnica de Catalunya (UPC)
Recercat. Dipósit de la Recerca de Catalunya
instname
Universitat Politècnica de Catalunya (UPC)
Recercat. Dipósit de la Recerca de Catalunya
instname
N -type organic thin-film transistors based on N,N′-ditridecylperylene-3,4,9,10-tetracarboxylic diimide have been fabricated by thermal evaporation at different substrate temperatures. The best device was obtained at 120 °C with a field-effect mob
Publikováno v:
Journal of Non-Crystalline Solids. 354:2888-2891
We investigate defect states in pentacene thin films (PTFs) prepared by two different deposition techniques: standard thermal evaporation in high vacuum and the Langmuir–Blodgett (LB) technique. Time domain capacitance–voltage (C–V) and charge
Autor:
Ramon Alcubilla, Joaquim Puigdollers, M. Vetter, M. Fonrodona, Jordi Andreu, Marco Stella, Cristobal Voz, S. Cheylan
Publikováno v:
UPCommons. Portal del coneixement obert de la UPC
Universitat Politècnica de Catalunya (UPC)
Recercat. Dipósit de la Recerca de Catalunya
instname
Universitat Politècnica de Catalunya (UPC)
Recercat. Dipósit de la Recerca de Catalunya
instname
Copper phthalocyanine (CuPc) thin-film transistors have been fabricated using polymethyl methacrylate (PMMA) as gate dielectric. A bottom gate, staggered structure was selected to study the device performance. CuPc thin-films were deposited by therma
Autor:
D. Navarro, Ivan Pelant, T. Ostatnický, Massimo Cazzanelli, K. Luterová, Lorenzo Pavesi, Jan Valenta, S. Cheylan
Publikováno v:
physica status solidi (c). 2:3429-3434
Thin layers of silicon nanocrystals prepared by silicon-ion implantation into silica substrate form active planar optical waveguides. Testing experiments of optical gain have been performed on a sample implanted to a dose of 4 × 1017 cm–2 by using
Autor:
K. Luterová, B. Hönerlage, Robert Elliman, T. Ostatnický, Ivan Pelant, Jan Valenta, S. Cheylan
Publikováno v:
Optical Materials. 27:781-786
Samples with the structure of asymmetric planar waveguides are fabricated by implanting Si + ions with energy of 400 keV and doses from 3 to 6 × 10 17 cm −2 into synthetic silica slabs. Broad photoluminescence spectrum is observed when collecting
Autor:
B. Hönerlage, Jan Valenta, Ivan Pelant, K. Luterová, T. Ostatnický, D. Navarro, K. Dohnalová, S. Cheylan, Massimo Cazzanelli, Lorenzo Pavesi, P. Gilliot, Jean-Pierre Likforman
Publikováno v:
Optical Materials. 27:750-755
Stimulated emission from nanocrystalline silicon in the visible has become a hot topic during the past years. Various forms of silicon nanostructures are being exploited, among them planar optical waveguides made of silicon nanocrystals, silicon supe
Autor:
Charles Hirlimann, Jan Linnros, S. Cheylan, Jean-Luc Rehspringer, Jan Valenta, Robert Juhasz, F. Huber, Robert Elliman
Publikováno v:
Journal of Applied Physics. 93:4471-4474
This work was supported by GACR (202/03/0789), NATO (PST.CLG.978100), and by the Royal Swedish Academy of Sciences. One of the authors ~J.V.! appreciates financial support from the French government (program Echange).
Autor:
Robert Elliman, S. Cheylan
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. :422-425
The effect of H passivation on the PL emission of Si nanocrystals produced in silica by ion-implantion and annealing is shown to depend on the implant fluence. At low fluences, where the nanocrystals are small, passivation causes an enhancement of th