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Autor:
S. Cherekdjian, J. Nunes
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 96:118-122
The standard deviation of Test-Retest error provides an absolute measure of the error introduced by the measurement system. It does not, however, characterize the relative usefulness of the measurement system for measuring a specific product. Such a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5fdc4c9dff57b82e883394611d631644
https://doi.org/10.1016/0168-583x(94)00470-6
https://doi.org/10.1016/0168-583x(94)00470-6
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 96:87-91
Glow discharge mass spectrometry (GDMS) has been used to provide trace elemental analysis of tungsten filaments used in ion implantation technology. Results indicated very large potassium signals on all of the tungsten samples with levels from 310 to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ae1366de29c1374d48729fa586db70e4
https://doi.org/10.1016/0168-583x(94)00459-5
https://doi.org/10.1016/0168-583x(94)00459-5
Autor:
S. Cherekdjian, R. O. Maschmeyer, J. Cites, J. Tatemichi, Y. Inouchi, M. Onoda, K. Orihira, T. Matsumoto, M. Konishi, M. Naito, Jiro Matsuo, Masataka Kase, Takaaki Aoki, Toshio Seki
Publikováno v:
AIP Conference Proceedings.
A Nissin iG4 ion doping system (termed iG4) utilizes broad beam technology to implant GEN 4 sheets of glass for LCD production. The mechanical scanned end‐station with robotic handling for GEN 4 glass substrates was redesigned, and a new end‐stat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9c4bdfc51848c10eb1762335e8c4ce59
https://doi.org/10.1063/1.3548430
https://doi.org/10.1063/1.3548430
Autor:
S. Cherekdjian, J. G. Couillard, C. Wilcox, Jiro Matsuo, Masataka Kase, Takaaki Aoki, Toshio Seki
Publikováno v:
AIP Conference Proceedings.
Researchers at Corning Incorporated have developed a process whereby single crystal silicon thin films are transferred onto a flat panel display glass substrate using hydrogen ion implantation. The energy of the implant controls the effective exfolia
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fa50dec2b91c0df7a5e5ef18d5cb1512
https://doi.org/10.1063/1.3548364
https://doi.org/10.1063/1.3548364
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 74:123-126
Ion beam channeling significantly influences the implanted dopant profile and increases the resultant junction depth. For electrostatic scan ion implanters this also manifests itself as a wafer non-uniformity. In this study, wafer sheet resistance ma
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0072e71301841e02a3251678ffea5b64
https://doi.org/10.1016/0168-583x(93)95027-3
https://doi.org/10.1016/0168-583x(93)95027-3
Autor:
S. Cherekdjian
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 74:259-262
A previous paper [Nucl. Instr. and Meth. B55 (1991) 178] has demonstrated that the correct equipment specification and process procedures enable the reliable direct probing of low dose sheet resistance monitors. Utilizing this, we are able to charact
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ca3e3cc37e103812f452f4d64980e820
https://doi.org/10.1016/0168-583x(93)95056-b
https://doi.org/10.1016/0168-583x(93)95056-b
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. :145-149
In order to characterize the deep damage produced by high-energy 0.5–2.0 MeV implants of As and P into p-type (100)Si, we have employed a laser induced photothermal reflectance measurement technique and the standard RBS/channeling technique using 2
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0922e5355defe54655b702ce67cf6cd1
https://doi.org/10.1016/0168-583x(91)95195-j
https://doi.org/10.1016/0168-583x(91)95195-j
Autor:
W. Weisenberger, S. Cherekdjian
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 55:178-182
Low-dose monitoring has always been a problem. The monitors drift with time either within minutes of an implant or within days or months. Resistivity excursions in excess of 50% are not uncommon. This paper presents data to understand some of the fac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::110e664c0f57b9ffa5970f6d7d2ada1c
https://doi.org/10.1016/0168-583x(91)96157-g
https://doi.org/10.1016/0168-583x(91)96157-g
Autor:
S. Cherekdjian, W. Weisenberger
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 55:30-34
The presence of energetic neutrals in a high-current, high-energy implant can result in nonuniformities on a silicon wafer. A larger concern is when the energetic neutrals are not of the desired energy. This is a major consideration when designing io
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2d771f38491b41d26c60b8bb9ce9b9aa
https://doi.org/10.1016/0168-583x(91)96130-d
https://doi.org/10.1016/0168-583x(91)96130-d