Zobrazeno 1 - 10
of 16
pro vyhledávání: '"S. Chereckdjian"'
Publikováno v:
Proceedings of 15th IEEE/CHMT International Electronic Manufacturing Technology Symposium.
The ability of several advanced statistical process control (SPC) methods to monitor an advanced ion implanation center over a period of six weeks is investigated. Sheet resistance data plotted on Box and Whiskers and Cpk charts are compared to the t
Publikováno v:
Proceedings of 11th International Conference on Ion Implantation Technology.
There has been a great deal of interest in the Indium Gallium Arsenide (InGaAs) material system, both lattice matched to Indium Phosphide (InP) as well as material grown pseudomorphically on GaAs because of its importance to optoelectronic devices. I
Autor:
I. H. Wilson, S. Chereckdjian
Publikováno v:
Radiation Effects. 98:179-187
Parameters of relevance to ion beam lithography and ion implantation masking have been determined for two polymer resists, PMMA and Microposit 23M. These have been bombarded with 50 keV As+ at low power densities in order to avoid blister formation.
Autor:
I.H. Wilson, S. Chereckdjian
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 1:258-264
Evaporated aluminium films (typically 2500 A thick) were bombarded with a collimated beam of molecular oxygen ions at energies between 50 and 150 keV. Talystep measurements show a good correlation between the measured vertical surface expansion and t
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. :735-741
A geometrical theory is presented which divides the collision cascade into energy groups, each with a characteristic anisotropy in the distribution in space of knock-on trajectories. A simplified two group, four (quasi-two-dimensional) component anal
Autor:
I.H. Wilson, S. Chereckdjian
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 13:426-433
Triple resonator measurements are presented of the sputtering yield and the lateral stress versus incident ion dose in the range of 100 KeV 10 13 –10 17 cm −2 for polycrystalline Au bombarded by 50 keV Ar + As + and Kr + ions and for amorphous Ge
Autor:
S. Chereckdjian, I. H. Wilson
Publikováno v:
Materials Modification by High-fluence Ion Beams ISBN: 9789401070638
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::34bf1d62cc9c7e857320a5d02eccc953
https://doi.org/10.1007/978-94-009-1267-0_30
https://doi.org/10.1007/978-94-009-1267-0_30
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