Zobrazeno 1 - 4
of 4
pro vyhledávání: '"S. Ch. Kim"'
Autor:
I. V. Grekhov, E. I. Belyakova, L. S. Kostina, S. Ch. Kim, N. M. Shmidt, T. S. Argunova, Konstantin B. Kostin, Eun Dong Kim
Publikováno v:
Technical Physics. 46:690-695
An original technique for Si-Si direct bonding combined with impurity diffusion in a single process is suggested. A dopant (aluminum) source is located at the interface. The high-temperature treatment of the polished wafers in an oxidizing atmosphere
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::50853d4c6783d8696dbcb8f13d194674
https://doi.org/10.1134/1.1379636
https://doi.org/10.1134/1.1379636
Autor:
Jürgen Härtwig, M. Ohler, A. V. Shturbin, I. V. Grekhov, T. V. Kudryavtseva, Tatiana S. Argunova, L. S. Kostina, M. Yu. Gutkin, R. F. Vitman, Eun Dong Kim, S. Ch. Kim
Publikováno v:
Physics of the Solid State. 41:1790-1798
The elastically strained state of the interface in directly-bonded silicon structures has been studied by x-ray diffraction topography and IR spectrometry. The pattern of the contrast observed in the x-ray topographs and the intensity oscillations in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9dd05f30db98a88d4b9a912e325808c9
https://doi.org/10.1134/1.1131099
https://doi.org/10.1134/1.1131099
Autor:
S. Ch. Kim, A. M. Mustafin
Publikováno v:
Bulletin of Experimental Biology and Medicine. 92:946-947
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f24f50e18a15169b972963e62ff64c02
https://doi.org/10.1007/bf00837008
https://doi.org/10.1007/bf00837008
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