Zobrazeno 1 - 2
of 2
pro vyhledávání: '"S. C. Puddephatt"'
Publikováno v:
SPIE Proceedings.
Control of the morphology of epitaxial thin films is a prerequisite for device applications. Particularly crucial is the formation of smooth and defect—free hetero—interfaces at elevated temperatures where cluster formation is thermodynami- cally
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::340fee704f9b2b6f3ab0ce25bfd03625
https://doi.org/10.1117/12.175793
https://doi.org/10.1117/12.175793
Autor:
T.D. Lowes, S. C. Puddephatt
Publikováno v:
MRS Proceedings. 317
The interaction of group III Metal clusters with the underlying III-V compound semiconductor substrate is examined. Specifically, both In and Ga on InP and GaAs (001) are discussed. Two Methods of obtaining an excess concentration of the group III Me
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4a1b29a9d1428df784625c0c2cd62d23
https://doi.org/10.1557/proc-317-143
https://doi.org/10.1557/proc-317-143