Zobrazeno 1 - 10
of 18
pro vyhledávání: '"S. C. Palmateer"'
Autor:
V. Diadiuk, Woo Young Choi, Steven H. Groves, Brian R. Bennett, Ning Pan, J. H. Smet, Lung-Han Peng, S. C. Palmateer, Tom P. E. Broekaert, Clifton G. Fonstad
Publikováno v:
Journal of Applied Physics. 72:3664-3669
Infrared absorption and photocurrent measurements have been applied to study the photoresponse below the band gap of indium gallium arsenide (In0.53Ga0.47As) grown lattice matched to Fe‐doped semi‐insulating indium phosphide (InP) substrates by v
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::33f0a34cdde46761504df00afc6ff8c4
https://doi.org/10.1063/1.352310
https://doi.org/10.1063/1.352310
Publikováno v:
LEOS '90. Conference Proceedings IEEE Lasers and Electro-Optics Society 1990 Annual Meeting.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e1f3f28f6d3923f2039e2a59022ebf23
https://doi.org/10.1109/leos.1990.690714
https://doi.org/10.1109/leos.1990.690714
Publikováno v:
Applied Physics Letters. 60:6-8
Buried‐heterostructure quantum‐well lasers fabricated by mass transport are reported for In0.18Ga0.82As/GaAs/Ga0.5In0.5P strained‐layer structures grown by atmospheric pressure organometallic vapor‐phase epitaxy. Threshold current densities a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c38261e29a57270cb413ab549371a989
https://doi.org/10.1063/1.107377
https://doi.org/10.1063/1.107377
Publikováno v:
Applied Physics Letters. 56:312-314
Mass transport of a semiconductor alloy has been demonstrated using Ga0.51In0.49P which is lattice matched to GaAs. Buried‐heterostructure diode lasers with Ga0.51In0.49P as cladding and GaAs as the active layer have been made using this fabricatio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::155983387764eb155174f5f80931cff3
https://doi.org/10.1063/1.102813
https://doi.org/10.1063/1.102813
Publikováno v:
12th IEEE International Conference on Semiconductor Laser.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::380ddb36a1ac16002f0904fb244b8855
https://doi.org/10.1109/islc.1990.764468
https://doi.org/10.1109/islc.1990.764468
Application of plasma polymerized methylsilane resist for all-dry 193 nm deep ultraviolet processing
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 13:2994
Preliminary experiments employing plasma polymerized methylsilane (PPMS) as a single and bilayer resist system demonstrated that the resist process developed at 248 nm is extendible for application at 193 nm. PPMS exhibited excellent photosensitivity
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b5cbe518ada6016d5f0ff713a9675e2a
https://doi.org/10.1116/1.588294
https://doi.org/10.1116/1.588294
Publikováno v:
Physical Review B. 33:8216-8227
Magnetoresistance measurements are made on the two-dimensional electron gas in GaAs-${\mathrm{Al}}_{\mathrm{x}}$${\mathrm{Ga}}_{1\mathrm{\ensuremath{-}}\mathrm{x}}$As heterostructures as a function of the sample width (W) and the potential probe spac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0b2cd4e2dfd5acd7f5c9c4612fbe4ad8
https://doi.org/10.1103/physrevb.33.8216
https://doi.org/10.1103/physrevb.33.8216
Publikováno v:
Journal of Applied Physics. 55:4367-4372
Evidence of exciton transport in optically excited Al0.2Ga0.8As‐GaAs quantum well structures at low temperature and low excitation intensity is demonstrated. Photoluminescence studies of single quantum wells showed an increase in the luminescence i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::02356cd3fdcaef1fbf2ebdff70ea2390
https://doi.org/10.1063/1.333005
https://doi.org/10.1063/1.333005
Publikováno v:
Physical Review B. 36:2707-2712
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0dc7e36642eb3df1354940b8835a6bf6
https://doi.org/10.1103/physrevb.36.2707
https://doi.org/10.1103/physrevb.36.2707
Publikováno v:
Journal of Electronic Materials. 12:1051-1063
Photoluminescence spectra are presented on single quantum well (SQW) structures on thick (1.0 µm) A10.20Ga0.80As buffers grown by molecular beam epitaxy (MBE). Through substrate preparation and careful control of growth conditions, full width half m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6190a345aff24ab8583978db2c25caab
https://doi.org/10.1007/bf02654974
https://doi.org/10.1007/bf02654974