Zobrazeno 1 - 1
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pro vyhledávání: '"S. C. Lizotte"'
Publikováno v:
IEEE Transactions on Nuclear Science. 34:1431-1437
The dependence of latch-up sensitivity in 1.25 μm p-well, CMOS devices on layout parameters, backside contacts, and thickness of epitaxial layers has been investigated by analysis and testing using a specially designed test chip. Retrograde wells an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7c77d433f671000cddb224a52eb9f012
https://doi.org/10.1109/tns.1987.4337493
https://doi.org/10.1109/tns.1987.4337493
