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Field‐effect conductance in amorphous silicon thin‐film transistors with a defect pool density of states

Autor: S. C. Deane, M. J. Powell

Publikováno v: Journal of Applied Physics. 74:6655-6666

A new computer program to analyze field‐effect conductance measurements has been developed. In this program a defect pool model, where the equilibrium density of state is determined by the Fermi level, has been incorporated. Transistors with finite

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::584c298a0647540e116dedc3da7ba8a0
https://doi.org/10.1063/1.355108

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Defect pool in amorphous-silicon thin-film transistors

Autor: S. C. Deane, M. J. Powell, C. van Berkel, William I. Milne, Anthony R. Franklin

Publikováno v: Physical Review B. 45:4160-4170

Amorphous-silicon thin-film transistors show a threshold voltage shift when subjected to prolonged bias stress. For transistors made with silicon oxide as the gate dielectric, the threshold shift induced under positive bias is due to the creation of

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ca68dd0ca6c808378666afab69586f67
https://doi.org/10.1103/physrevb.45.4160

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A defect-pool model for near-interface states in amorphous silicon thin-film transistors

Autor: M. J. Powell, William I. Milne, S. C. Deane, John Richard Hughes, Ian D. French

Publikováno v: Philosophical Magazine B. 63:325-336

We present evidence that the majority of deep states located near to the gate-insulator interface in amorphous silicon (a-Si) thin-film transistors are part of a defect pool of silicon dangling-bond states, whose density and energy position within th

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::0481f66aa334f4a359d8fccbc9ddf2bd
https://doi.org/10.1080/01418639108224449

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Instability mechanisms in amorphous silicon thin film transistors and the role of the defect pool

Autor: M. J. Powell, S. C. Deane, C. van Berkel

Publikováno v: Journal of Non-Crystalline Solids. :1215-1220

The threshold voltage shift in amorphous silicon thin film transistors at moderate applied bias is detemined by changes in the density of dangling bond states in the a-Si:H. Positive bias-stress creates dangling bond states at a low energy (D e state

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::5a12c08185fbcbc337c58ad38eb014cd
https://doi.org/10.1016/s0022-3093(05)80342-4

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Defect chemical potential and the density of states in amorphous silicon

Autor: S. C. Deane, M. J. Powell

Publikováno v: Physical review letters. 70(11)

We derive a general expression for the defect chemical potential of amphoteric silicon dangling bond states in amorphous silicon. We show that a single expression is valid, irrespective of the charge state of the dangling bond. We apply this result i

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::59ca749985fffa2c98cf59f06f555cb8
https://pubmed.ncbi.nlm.nih.gov/10053350

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Reduction of Threshold Voltage Shift by Bias Annealing of Hydrogenated Amorphous Silicon Thin Film Transistors

Autor: S. C. Deane, W. I. Milne, M. J. Powell

Publikováno v: MRS Proceedings. 219

We show that bias annealing modifies the rate of threshold voltage shift under bias stress in the regime where state creation dominates. Previously we have shown that the deep state distribution near the interface of a-Si:H TFTs can be altered by bia

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::db3c6469d91f86b7a49510dd1b98f862
https://doi.org/10.1557/proc-219-333

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Thin-film-transistor- and diode-addressed AMLCDs on polymer substrates

Autor: A. D. Pearson, S. C. Deane, R.M. Bunn, G. Harkin, Richard W. Wilks, Nigel D. Young, M. J. Edwards, David J. Mcculloch

Publikováno v: Journal of the Society for Information Display. 5:275

— Amorphous-silicon-rich nitride (αSiNx:H) thin-film diodes (TFDs) have been fabricated on glass, polyethersulphone (PES), polyacrylate (PAR), and polyethelyenenaphthalate (PEN) substrates at temperatures of 150–200°C, and a TFD-addressed TN-LC

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::c46f100c2af2c6b9f3b1e784c271e556
https://doi.org/10.1889/1.1985162

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Photoenhanced CVD of hydrogenated amorphous silicon using an internal hydrogen discharge lamp

Autor: F. J. Clough, SD Baker, Paul Robertson, William I. Milne, S. C. Deane

Publikováno v: Applied Surface Science. 43:277-284

This paper reviews the production of a-Si:H by photo-enhanced chemical vapour deposition using a novel windowless, internal hydrogen discharge lamp. The absence of highly charged species bombarding the film surface in the photoCVD process means that

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::06e1b731a88c0a2394431fb235eae2ec
https://doi.org/10.1016/0169-4332(89)90225-0

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Unification of the time and temperature dependence of dangling-bond-defect creation and removal in amorphous-silicon thin-film transistors

Autor: Ralf B. Wehrspohn, S. C. Deane, M. J. Powell

Publikováno v: Scopus-Elsevier

We present a thermalization-energy concept that unifies the time and temperature dependence of Si dangling-bond-defect creation and removal in amorphous-silicon thin-film transistors. There is a distribution of energy barriers for defect creation and

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e8b1cefa2c71f322e1c088dd24a43fe3
http://www.scopus.com/inward/record.url?eid=2-s2.0-0000478846&partnerID=MN8TOARS

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