Zobrazeno 1 - 10
of 96
pro vyhledávání: '"S. Boret"'
Autor:
Patrick Scheer, Sébastien Jan, F. Cacho, S. Boret, Gerard Ghibaudo, L. Negre, D. Roy, Daniel Gloria
Publikováno v:
IEEE Journal of Solid-State Circuits. 47:1075-1083
In the framework of MOSFET reliability for RF/AMS applications, a deep investigation of RF parameters degradation is performed. An innovative flow, composed of DC and RF stresses with DC and RF aging characterization, is presented. Degradation kineti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::208971a1eaa123dc87a51618a8452002
https://doi.org/10.1109/jssc.2012.2185549
https://doi.org/10.1109/jssc.2012.2185549
Akademický článek
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Autor:
L. Depoyan, Alain Chantre, S. Montusclat, Malick Diop, Pascal Chevalier, M. Buczko, C. Leyris, Sorin P. Voinigescu, K.H.K. Yau, A. Margain, N. Derrier, S. Boret, S.T. Nicolson, Nicolas Loubet, S. Pruvost, G. Avenier, Nathalie Revil, Didier Dutartre, J. Bouvier, Daniel Gloria, G. Troillard
Publikováno v:
IEEE Journal of Solid-State Circuits. 44:2312-2321
This paper presents a complete 0.13 μm SiGe BiCMOS technology fully dedicated to millimeter-wave applications, including a high-speed (230/280 GHz fT/fMAX) and medium voltage SiGe HBT, thick-copper back-end designed for high performance transmission
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2426966728ff3b39a43ccaaae889c1b7
https://doi.org/10.1109/jssc.2009.2024102
https://doi.org/10.1109/jssc.2009.2024102
Autor:
Philippe Delpech, Raphael Clerc, Gerard Ghibaudo, Sylvie Bruyere, S. Boret, J.-C. Giraudin, Laurent Montès, G. Pananakakis, E. Picollet, N. Segura, J.-P. Manceau, A. Bajolet
Publikováno v:
Solid-State Electronics. 50:1244-1251
Integrated circuits for analog and telecom applications require metal insulator metal (MIM) capacitors with not only a high capacitance value (typically 5 nF/mm 2 ), but also a low series resistance R s . The optimization of this latter parameter is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::81e8a2abfd44b7a06df83cbed9d27073
https://doi.org/10.1016/j.sse.2006.06.015
https://doi.org/10.1016/j.sse.2006.06.015
Autor:
L. Vishnubhotla, Pierre Morin, Robert Fox, S. Boret, R. Difrenza, B. Tavel, K. Rochereau, P. Stolk, C. Detcheverry, Daniel Gloria, M.T. Basso, M. Woo, M. Broekaart, B. Duriez, P. Garnier, D. Reber, Y. Trouille, J. Bienacel, M. Denais, D. Barge, C. Ortolland, K. Cooper, Frederic Boeuf, S. Vanbergue, Vincent Huard, Jean-Damien Chapon, J. Belledent, Pascal Gouraud, Nicolas Planes, Franck Arnaud, P. Abramowitz, E. Saboure, Y. Laplanche, C. Julien, M. Bidaud, M. Marin, Romain Gwoziecki
Publikováno v:
Solid-State Electronics. 50:573-578
A complete 65 nm CMOS platform, called LP/GP Mix, has been developed employing thick oxide transistor (IO), Low Power (LP) and General Purpose (GP) devices on the same chip. Dedicated to wireless multi-media and consumer applications, this new triple
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2a1f438c93e06660abf827ae1f1027bf
https://doi.org/10.1016/j.sse.2006.03.030
https://doi.org/10.1016/j.sse.2006.03.030
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 53:123-133
Silicon planar and three-dimensional inductors and transformers were designed and characterized on-wafer up to 100 GHz. Self-resonance frequencies (SRFs) beyond 100 GHz were obtained, demonstrating for the first time that spiral structures are suitab
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::64a5a37a8f2288b773bdb8c041953baf
https://doi.org/10.1109/tmtt.2004.839329
https://doi.org/10.1109/tmtt.2004.839329
Publikováno v:
IEEE Journal of Solid-State Circuits. 38:2318-2324
Addressing reconfiguration of radio frequency (RF) systems might require high performance integrated RF switching capabilities. In this regard, a particular design experience of an integrated circuit (IC) monolithically integrated microelectromechani
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fdad376b3ba27eee384fb3bbbdad4278
https://doi.org/10.1109/jssc.2003.819170
https://doi.org/10.1109/jssc.2003.819170
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing
IEEE Transactions on Semiconductor Manufacturing, Institute of Electrical and Electronics Engineers, 2012, 25, pp.170-177. ⟨10.1109/TSM.2011.2181673⟩
IEEE Transactions on Semiconductor Manufacturing, 2012, 25, pp.170-177. ⟨10.1109/TSM.2011.2181673⟩
IEEE Transactions on Semiconductor Manufacturing, Institute of Electrical and Electronics Engineers, 2012, 25, pp.170-177. ⟨10.1109/TSM.2011.2181673⟩
IEEE Transactions on Semiconductor Manufacturing, 2012, 25, pp.170-177. ⟨10.1109/TSM.2011.2181673⟩
In this paper, the design and use of an in situ tuner (IST) aiming On-Wafer multi-impedance method are presented. The conventional method using Off-Wafer tuner is limited by the frequency range and has high losses between this external tuner and the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4ba8736c0defa4dfbd39f92af3ef0ba2
https://hal.archives-ouvertes.fr/hal-00819467
https://hal.archives-ouvertes.fr/hal-00819467
Autor:
Patrick Scheer, Daniel Gloria, Alban Zaka, Gerard Ghibaudo, Florian Cacho, S. Boret, Laurent Negre, David Roy
Publikováno v:
2011 IEEE Radio Frequency Integrated Circuits Symposium.
In the framework of MOSFET reliability for mixed-analog application, a deep investigation of RF parameters degradation is performed. An innovative flow, composed of DC and RF stress with DC and RF aging characterization, is presented. Degradation kin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a0c4d0e462915771104196f94abc5027
https://doi.org/10.1109/rfic.2011.5940645
https://doi.org/10.1109/rfic.2011.5940645
Publikováno v:
2011 International Reliability Physics Symposium.
The continuous CMOS performance improvement enhances the interest of the RF CMOS for millimeter wave application. Hence the extension of DC reliability model in the RF domain is becoming critical. Understanding the MOSFET aging influence on the small
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2ebfa35c1e4f565e79ca2a82a9b8d96a
https://doi.org/10.1109/irps.2011.5784583
https://doi.org/10.1109/irps.2011.5784583