Zobrazeno 1 - 10
of 18
pro vyhledávání: '"S. Bordez"'
Publikováno v:
Solid-State Electronics. 53:127-133
For the first time, a huge drain current fluctuations degradation is shown on heavily pocket-implanted above-micrometer devices. This degradation, which is a serious concern for analog design, is attributed to the high potential barriers that stand a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6a72004bf54b8d7a5261cc7e2777a95c
https://doi.org/10.1016/j.sse.2008.09.017
https://doi.org/10.1016/j.sse.2008.09.017
Publikováno v:
2008 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA).
For the first time, a strong current local fluctuations degradation on heavily pocket-implanted long devices is shown. This degradation, which is a serious concern for analog design, is attributed to the high potential barriers that stand at end side
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a876a2f6adadb4e062d09ae2ebb13f8d
https://doi.org/10.1109/vtsa.2008.4530850
https://doi.org/10.1109/vtsa.2008.4530850
Publikováno v:
2008 IEEE International Conference on Microelectronic Test Structures.
Many test structures embedded in various technologies were measured to study the spacing impact on MOSFET mismatch. This impact is showed to highly depend on technology, device family, device type and bias conditions. The study of spatial correlation
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::071f3e7ddc913718b5323478b9512dc6
https://doi.org/10.1109/icmts.2008.4509320
https://doi.org/10.1109/icmts.2008.4509320
Publikováno v:
2007 IEEE International Conference on Microelectronic Test Structures.
Delivering mismatch data that reflect design reality is a real challenge. Indeed, from test structures to final data utilization, many steps can be the source of distortion. The first possible source of distortion is linked to the differences in term
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3032b0bdbd85d1ed734594983ff8018d
https://doi.org/10.1109/icmts.2007.374490
https://doi.org/10.1109/icmts.2007.374490
Publikováno v:
2007 IEEE International Conference on Microelectronic Test Structures.
MOS transistor threshold voltage matching is usually modeled proportionally to reverse square root of gate area. Yet this model is not satisfactory when discontinuities are observed. In this paper, a continuous matching model with only two parameters
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c381df2e8047441aeaec278082b6fbec
https://doi.org/10.1109/icmts.2007.374489
https://doi.org/10.1109/icmts.2007.374489
Publikováno v:
AIP Conference Proceedings.
The aim of this work is to evaluate the impact on low frequency noise performances due to pocket implantation. Low frequency noise measurements have been done on different gate lengths in a range of 0.04 to 10 μm and 10 μm for gate width. Different
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a85558ce572318dd4af433301486b294
https://doi.org/10.1063/1.2759653
https://doi.org/10.1063/1.2759653
Autor:
N. Cave, Vincent Huard, C. Monget, C. Le Cam, S. Zoll, S. Parihar, S. Bordez, F. Guyader, D. Delille, N. Auriac, Michel Haond, R. Pantel, B. Icard, M. Zaleski, S. Harrison, A. Margain, C. Blanc, Scott Warrick, D. Barge, J. Belledent, D. Villanueva, Francois Leverd, G. Ribes, E. Baylac, Alexis Farcy, C. Laviron, Kathy Barla, E. Perrin, K. Rochereau, M. Bidaud, S. Manakli, Pascal Gouraud, Laurent Pain, O. Callen, Blandine Minghetti, Emmanuel Josse, Paulo Ferreira, R. Ranica
Publikováno v:
2006 International Electron Devices Meeting.
This paper presents a cost-effective 45-nm technology platform, primarily designed to serve the wireless multimedia and consumer electronics needs. This platform features low power transistors operating at a nominal voltage of 1.1V, an ultra low k di
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cd04a63739424f6f3bc7798a8d44e368
https://doi.org/10.1109/iedm.2006.346880
https://doi.org/10.1109/iedm.2006.346880
Publikováno v:
2006 IEEE International Conference on Microelectronic Test Structures.
An improved methodology for the characterization of matching parameters in MOSFETs and bipolar transistors is presented. Because of their statistical nature, only estimation of matching parameters can be provided from given measurements. Considering
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::86d2d5abb3fc4cfe8ae38592f84d7f4a
https://doi.org/10.1109/icmts.2006.1614298
https://doi.org/10.1109/icmts.2006.1614298
Publikováno v:
Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting, 2005..
Matching of bipolar transistors has been characterized for high currents. The predominant impact of access resistance mismatch is clearly demonstrated, and matching models are suggested. Moreover, matching results dependency on test configurations is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::39299dc1c0f9a3194ecc758046a7daba
https://doi.org/10.1109/bipol.2005.1555201
https://doi.org/10.1109/bipol.2005.1555201
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