Overcoming the Data Deluge Challenges with Greener Electronics

Autor: J.-R. Lequepeys, Thomas Ernst, Alexandre Valentian, S. Catrou, L. Herault, T. Signamarcheix, D. Louis, Elisa Vianello, R. Fournel, S. Bonnetier, F. Perruchot, C. Reita, A. Jerraya, M. Duranton

Publikováno v: ESSCIRC
ESSCIRC 2021-IEEE 47th European Solid State Circuits Conference (ESSCIRC)
ESSCIRC 2021-IEEE 47th European Solid State Circuits Conference (ESSCIRC), Sep 2021, Grenoble, France. pp.7-14, ⟨10.1109/ESSCIRC53450.2021.9567836⟩

The complete ecosystem of electronic device manufacturers, from microelectronics, software and hardware designers to developers, producers, and integrators, is facing an immense new environmental challenge: to cope with the data deluge and to reduce

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7f481a62ad851d625170bfdf4411a539
https://doi.org/10.1109/esscirc53450.2021.9567836

Fully-depleted SOI technology using high-k and single-metal gate for 32 nm node LSTP applications featuring 0.179 μm2 6T-SRAM bitcell

Autor: C. Fenouillet-Beranger, J. Todeschini, J.C. Le-Denmat, N. Loubet, C. Gallon, P. Perreau, S. Manakli, B. Minghetti, L. Pain, V. Arnal, A. Vandooren, S. Denorme, D. Aime, L. Tosti, C. Savardi, M. Broekaart, P. Gouraud, F. Leverd, V. Dejonghe, P. Brun, M. Guillermet, M. Aminpur, B. Icard, S. Barnola, F. Rouppert, F. Martin, T. Salvetat, S. Lhostis, C. Laviron, N. Auriac, T. Kormann, G. Chabanne, S. Gaillard, F. Boeuf, O. Belmont, E. Laffosse, D. Barge, A. Zauner, A. Tarnowka, K. Romanjec, H. Brut, A. Lagha, S. Bonnetier, F. Joly, J. Coignus, N. Mayet, A. Cathignol, D. Galpin, D. Pop, R. Delsol, R. Pantel, F. Pionnier, G. Thomas, D. Bensahel, S. Deleonibus, O. Faynot, T. Skotnicki, H. Mingam, L. Brevard, C. Buj, C. Soonekindt

Publikováno v: 2007 IEEE International Electron Devices Meeting.

In this paper, we report on FD-SOI with high-k and single metal gate as a possible candidate for the 32 nm LOP and LSTP nodes. Good Ion/Ioff performance for nMOS and pMOS transistors in the ultra-low-leakage regime (Ioff=6.6 pA/μm) are presented. In

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::9b01d356319804f33639c8bbcd010bbb
https://doi.org/10.1109/iedm.2007.4418919

Highly scalable and WF-tunable Ni(Pt)Si/SiON TOSI-gate CMOS devices obtained in a CMP-less integration scheme

Autor: Mustapha Rafik, T. Kormann, A. Mondot, D. Barge, A. Zauner, A. Toffoli, A. Tarnowka, Claire Fenouillet-Beranger, C. Laviron, Pascal Gouraud, Thomas Skotnicki, Simone Pokrant, D. Aime, S. Bonnetier, G. Braeckelmann, Frederic Boeuf, G. Bidal, G. Chabanne, Stephane Denorme, M. Muller

Publikováno v: Extended Abstracts of the 2006 International Conference on Solid State Devices and Materials.

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::576622f00ea1ff1f29d1fd86a3979bc6
https://doi.org/10.7567/ssdm.2006.j-8-1

Zirconolite Polytypes and Murataite Polysomes in Matrices for the REE—Actinide Fraction of HLW.

Autor: Yudintsev, Sergey V.¹ (AUTHOR), Nickolsky, Maximilian S.¹ (AUTHOR), Ojovan, Michael I.¹ (AUTHOR) m.i.ojovan@gmail.com, Stefanovsky, Olga I.² (AUTHOR), Nikonov, Boris S.¹ (AUTHOR), Ulanova, Amina S.¹ (AUTHOR)

Publikováno v: Materials (1996-1944). Sep2022, Vol. 15 Issue 17, p6091. 22p.

Thermal Effects and Glass Crystallization in Composite Matrices for Immobilization of the Rare-Earth Element–Minor Actinide Fraction of High-Level Radioactive Waste.

Autor: Yudintsev, Sergey V., Ojovan, Michael I., Malkovsky, Victor I.

Publikováno v: Journal of Composites Science; Feb2024, Vol. 8 Issue 2, p70, 24p