Zobrazeno 1 - 10
of 131
pro vyhledávání: '"S. Bonnefont"'
Publikováno v:
Périnatalité. 11:42-47
La structuration des données des dossiers patients en périnatalité a fait l’objet d’un consensus ancien en France. Il restait à valider le contenu des variables attendues dans le chapitre « post-partum » du dossier périnatal en maternité.
Autor:
Georges Vassilieff, Olivier Gilard, F. Lozes-Dupuy, Stephane Mariojouls, S. Bonnefont, Philippe Arguel, Corinne Vergnenègre, Béatrice Dagens
Publikováno v:
International Conference on Space Optics — ICSO 1997.
This paper, “A new concept of flared amplifier for high brightness source," was presented as part of International Conference on Space Optics—ICSO 1997, held in Toulouse, France.
Autor:
N. Dimarcq, F. Rigaud, J. Valentin, F.-J.. Vermersch, M. Krakowski, J. Berton, Francoise Lozes, Muriel Saccoccio, C. Chappaz, M. de Labachelerie, S. Bonnefont, Philippe Arguel, J. Loesel, D. Holleville
Publikováno v:
Scopus-Elsevier
In this proceeding we present a set of studies which are in progress in different labs and industrials. The aim of this project is to study the possibilities to design a very compact and reliable laser cooling bench for space and inboard applications
Autor:
F. Flye, M. de Labachelerie, S. Bonnefont, Philippe Arguel, C. Chappaz, F. Lozes-Dupuy, O. Dellea
Publikováno v:
International Conference on Space Optics — ICSO 2000.
Single-mode wavelength-stabilized light sources are key devices for spectroscopic applications, optical sensors, wavelength division multiplexing systems. Among the variety of wavelength stabilization schemes, external cavity lasers have been widely
Autor:
S. Bonnefont, F. Lozes-Dupuy, Antoine Monmayrant, Alexandre Larrue, Olivier Gauthier-Lafaye, J. Campos
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 17:1236-1241
We introduce and demonstrate experimentally that 2-D photonic crystals (PhC) allow the integration of single-mode distributed-feedback (DFB) lasers with both a precise control of the emission wavelength and a high robustness toward optical feedback.
Autor:
V. Ligeret, Laurent Lombez, Olivier Gilard, S. Bonnefont, Olivier Gauthier-Lafaye, Xavier Marie, F. Lozes-Dupuy, Delphine Lagarde, O.. Parillaud, Mathieu Boutillier, M. Krakowski
Publikováno v:
IEEE Transactions on Nuclear Science. 56:2155-2159
We report on a novel method to measure radiation induced non radiative carrier lifetime modifications in laser diodes. This method is based on the conjugation of theoretical gain calculation, experimental gain measurements, and threshold variation me
Autor:
Francois Lelarge, Beatrice Dagens, S. Bonnefont, B. Rousseau, F. Lozes-Dupuy, Mathieu Boutillier, Alain Accard, Dalila Make, Olivier Gauthier-Lafaye, O. Le Gouezigou, Francis Poingt, Frederic Pommereau
Publikováno v:
IEEE Transactions on Nuclear Science. 55:2243-2247
Quantum dash lasers were irradiated for the first time, using 31-MeV protons. These novel structures, which show promising performances for 1.55 mum optical communications exhibit better robustness to radiation than quantum well lasers.
Autor:
M.. Calligaro, Laurent Lombez, Delphine Lagarde, M. Krakowski, Olivier Gilard, Olivier Gauthier-Lafaye, Xavier Marie, S. Bonnefont, F. Lozes-Dupuy, Michel Lecomte, F.-J.. Vermersch, M. Boutillier, O.. Parillaud
Publikováno v:
IEEE Transactions on Nuclear Science. 54:1110-1114
852-nm emitting Al-free laser diodes and layers constituting the device are irradiated with 1-MeV electrons at fluences ranging from 1014 up to 1016e-/cm2. Layers corresponding to the laser diodes materials were characterised using photoluminescence
Autor:
O. Bouchard, S. Bonnefont, Laurent Jalabert, F. Lozes-Dupuy, S. Hernandez, Emmanuelle Daran, Emmanuel Scheid, P. Arguel, Olivier Gauthier-Lafaye
Publikováno v:
Microelectronic Engineering. 84:673-677
The fabrication and characterization of a nanoscale resonant optical filter at wavelength around 850nm is reported using standard C-MOS compatible microelectronics techniques. We discuss the different steps of the process and their impact on the fina
Autor:
Mathieu Boutillier, F.-J.. Vermersch, S. Bonnefont, Olivier Gauthier-Lafaye, F. Lozes-Dupuy, M. Krakowski, Olivier Gilard
Publikováno v:
Microelectronics Reliability. 46:1715-1719
We have step-irradiated Al-free laser diodes with 1 MeV electrons at fluences from 10 14 up to 10 16 electrons/cm 2 . We measure at each step their L-I and I-V characteristics to evaluate the impact of irradiation on optical and electrical properties