Pulsed laser ablation synthesis of Cu-based and Ni-based nanostructured electrodes for highly active alkaline oxygen and hydrogen evolution reactions

Autor: V. Iacono, C. Lo Pò, S. Scalese, S. Boninelli, G. G. Condorelli, M. G. Grimaldi, F. Ruffino

Publikováno v: APL Materials, Vol 11, Iss 11, Pp 111102-111102-10 (2023)

In the field of sustainability, hydrogen (H2) is considered a clean fuel and a renewable energy source with no pollutant emissions. The production of H2 by water electrolysis is well-known among the scientific community. Still, alkaline electrolysis

Externí odkaz: https://doaj.org/article/f52d00f2597a470eb635025d6ea89ab3

Nanoscale measurements of phosphorous-induced lattice expansion in nanosecond laser annealed germanium

Autor: S. Boninelli, R. Milazzo, R. Carles, F. Houdellier, R. Duffy, K. Huet, A. La Magna, E. Napolitani, F. Cristiano

Publikováno v: APL Materials, Vol 6, Iss 5, Pp 058504-058504-7 (2018)

Laser Thermal Annealing (LTA) at various energy densities was used to recrystallize and activate amorphized germanium doped with phosphorous by ion implantation. The structural modifications induced during the recrystallization and the related dopant

Externí odkaz: https://doaj.org/article/55b55139fb754a228021841f44efc0b1

Growth of thick [1 1 1]-oriented 3C-SiC films on T-shaped Si micropillars

Autor: Cristiano Calabretta, Roberto Bergamaschini, Danilo Crippa, F. La Via, Marco Mauceri, Fulvio Mancarella, Leo Miglio, M Albani, S. Boninelli, Marta Agati

Publikováno v: Materials & Design, Vol 208, Iss, Pp 109833-(2021)

In this paper we report the morphology and the microstructural properties of thick [1 1 1]-oriented 3C-SiC films epitaxially grown on T-shaped Si micropillars. This compliant substrate was designed to release the stress developed in 3C-SiC grown on S

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0de8199defcf383ba28314460cec2d13
http://www.sciencedirect.com/science/article/pii/S0264127521003865

Effects of Thermal Annealing Processes in Phosphorous Implanted 4H-SiC Layers

Autor: S. Boninelli, Lucia Calcagno, Cristiano Calabretta, Nicolò Piluso, Andrea Severino, Giuseppe Arena, Fabrizio Roccaforte, Filippo Giannazzo, Patrick Fiorenza, D. Mello

Publikováno v: Materials science forum 963 (2019): 407–411. doi:10.4028/www.scientific.net/MSF.963.407
info:cnr-pdr/source/autori:Severino A.; Mello D.; Boninelli S.; Roccaforte F.; Giannazzo F.; Fiorenza P.; Calabretta C.; Calcagno L.; Piluso N.; Arena G./titolo:Effects of thermal annealing processes in phosphorous implanted 4H-SiC layers/doi:10.4028%2Fwww.scientific.net%2FMSF.963.407/rivista:Materials science forum/anno:2019/pagina_da:407/pagina_a:411/intervallo_pagine:407–411/volume:963

Silicon carbide (SiC) is an attractive material for power devices owing to the availability of high-quality epitaxial wafers and superior physical properties, such as its high breakdown electric field strength, high electron mobility, and low anisotr

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7e259ee4643da7d1b39407bd0d3efaf5
https://doi.org/10.4028/www.scientific.net/msf.963.407

Investigation of oxygen penetration during UV nanosecond laser annealing of silicon at high energy densities

Autor: Filadelfo Cristiano, Sebastien Kerdiles, A. La Magna, S. Boninelli, Karim Huet, P. Acosta Alba, Eléna Bedel-Pereira, Hiba Rizk, Fulvio Mazzamuto, Richard Monflier, Julien Roul, Emmanuel Scheid, Toshiyuki Tabata

Publikováno v: Applied Surface Science
Applied Surface Science, 2021, 536, pp.149071. ⟨10.1016/j.apsusc.2021.149071⟩
Applied Surface Science, Elsevier, 2021, 536, pp.149071. ⟨10.1016/j.apsusc.2021.149071⟩

International audience; In this work, we present a comprehensive investigation of impurities contamination in silicon during UV Nanosecond Laser Annealing at high energy density. By investigating in detail the impact of the annealing ambient and of t

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3a1a8375d8384bd8f74db51286cc1698
https://doi.org/10.1016/j.apsusc.2021.149071