Zobrazeno 1 - 10
of 32
pro vyhledávání: '"S. Becu"'
Autor:
C. Le Royer, B. Mohamad, J. Biscarrat, L. Vauche, R. Escoffier, J. Buckley, S. Becu, R. Riat, C. Gillot, M. Charles, S. Ruel, P. Pimenta-Barros, N. Posseme, P. Besson, F. Boudaa, C. Vannuffel, W. Vandendaele, A.G. Viey, A. Krakovinsky, M.-A. Jaud, R. Modica, F. Iucolano, R. Le Tiec, S. Levi, M. Orsatelli, R. Gwoziecki, V. Sousa
Publikováno v:
2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::44dbbb3d01be89be8061e02121c4b306
https://doi.org/10.1109/ispsd49238.2022.9813672
https://doi.org/10.1109/ispsd49238.2022.9813672
Autor:
R. Kom Kammeugne, C. Theodorou, C. Leroux, L. Vauche, X. Mescot, R. Gwoziecki, S. Becu, M. Charles, E. Bano, G. Ghibaudo
Publikováno v:
Solid-State Electronics
Solid-State Electronics, 2023, 200, pp.108555. ⟨10.1016/j.sse.2022.108555⟩
Solid-State Electronics, 2023, 200, pp.108555. ⟨10.1016/j.sse.2022.108555⟩
International audience
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ccba85ceea2acfa422702ace7c6e2fe6
https://doi.org/10.1016/j.sse.2022.108555
https://doi.org/10.1016/j.sse.2022.108555
Autor:
R. Kom Kammeugne, C. Theodorou, C. Leroux, X. Mescot, L. Vauche, R. Gwoziecki, S. Becu, M. Charles, E. Bano, G. Ghibaudo
Publikováno v:
IEDM2021-IEEE International Electron Devices Meeting
IEDM2021-IEEE International Electron Devices Meeting, Dec 2021, San Francisco, United States. pp.39.4.1-39.4.4, ⟨10.1109/IEDM19574.2021.9720522⟩
IEDM2021-IEEE International Electron Devices Meeting, Dec 2021, San Francisco, United States. pp.39.4.1-39.4.4, ⟨10.1109/IEDM19574.2021.9720522⟩
International audience; This paper investigates the AlGaN/GaN and Al2O3/GaN interface quality on GaN MIS-HEMT using low frequency noise (LFN) measurements. To address the issue of noise in the access resistance, we have also tested "non-gated" 2DEG d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::eb61c3bc315dc58cdcf6db450771e58a
https://hal.science/hal-03762149
https://hal.science/hal-03762149
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Autor:
M. Vinet, J.-M. Pedini, S. Becu, M. Collonge, T. Ernst, Bernard Previtali, M. Ribeiro, Gerard Ghibaudo
Publikováno v:
2009 International Symposium on VLSI Technology, Systems, and Applications.
For the first time, an analytical model of an Accumulation-Mode Suspended-Gate MOSFET is proposed. For very low power operation, adhesion energies of gate and gate oxide as low as 130µJ/m2 are required as well as sub-2.3N/m doubly clamped gate. Expe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b149078976fadd1e20d405b1a2729ba4
https://doi.org/10.1109/vtsa.2009.5159315
https://doi.org/10.1109/vtsa.2009.5159315
Autor:
Sébastien Barnola, Virginie Loup, S. Pauliac, S. Becu, Bernard Guillaumot, F. Aussenac, Arnaud Hubert, G. Garnier, Cecilia Dupre, C. Vizioz, J.M. Hartmann, Simon Deleonibus, Gerard Ghibaudo, L. Baud, J. P. Colonna, Maurice Rivoire, Christian Arvet, M. Jublot, F. Allain, V. Maffini-Alvaro, Thierry Chevolleau, P. Rivallin, Thomas Ernst, O. Faynot
Publikováno v:
2008 IEEE International Electron Devices Meeting.
For the first time, we report a 3D stacked sub-15 nm diameter NanoWire FinFET-like CMOS technology (3D-NWFET) with a new optional independent gate nanowire structure named PhiFET. Extremely high driving currents for 3D-NWFET (6.5 mA/mum for NMOS and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9b9b83cded47c2d3cb6724c247e9233f
https://doi.org/10.1109/iedm.2008.4796805
https://doi.org/10.1109/iedm.2008.4796805
Autor:
Simon Deleonibus, Nathalie Vulliet, Philippe Coronel, Bernard Guillaumot, Thomas Skotnicki, Arnaud Hubert, Jean-Michel Hartmann, Cecilia Dupre, S. Becu, Olivier Thomas, C. Vizioz, E. Bernard, Thomas Ernst, Olivier Rozeau, O. Faynot
Publikováno v:
2008 IEEE International Conference on Integrated Circuit Design and Technology and Tutorial.
Novel 3D stacked gate-all-around multichannel CMOS architectures were developed to propose low leakage solutions and new design opportunities for sub-32 nm nodes. Those architectures offer specific advantages compared to other planar or non planar CM
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fe177390eb4cc766cc049c3d657187ae
https://doi.org/10.1109/icicdt.2008.4567292
https://doi.org/10.1109/icicdt.2008.4567292
Autor:
Thomas Ernst, Simon Deleonibus, Sébastien Barnola, Erwan Dornel, Cecilia Dupre, Jean-Charles Barbe, S. Becu, Francois Andrieu, C. Vizioz, O. Faynot, Vincent Delaye, J-M. Hartmann, Gerard Ghibaudo, Thierry Poiroux
Publikováno v:
Extended Abstracts of the 2007 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ac6c60e4a8c4f4579c2ee49a42673414
https://doi.org/10.7567/ssdm.2007.i-1-1
https://doi.org/10.7567/ssdm.2007.i-1-1
Autor:
S. Boret, S. Bruyere, Daniel Benoit, C. Besset, Philippe Delpech, J.-P. Manceau, M. Marin, C. Richard, S. Guillaumet, Alexis Farcy, A. Bonnard, M. Thomas, Sebastien Cremer, S. Becu, C. Perrot, N. Segura
Publikováno v:
2006 Bipolar/BiCMOS Circuits and Technology Meeting.
RF and analog designs require high performances MIM capacitors. In order to continue downscaling of MIM devices, we have developed and integrated a 3D damascene MIM capacitor in the copper back-end of a 0.13 mum BICMOS technology. Si3N4 has been used
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::39bc171eda8263ee371ca57e51e9c1fd
https://doi.org/10.1109/bipol.2006.311168
https://doi.org/10.1109/bipol.2006.311168