Effect of Thermal Annealing on Low-K Dielectrics for iBEOL in View of 3D Sequential Integration

Autor: D. Nouguier, Ahmad Bsiesy, Claire Fenouillet-Beranger, N. Rambal, Xavier Federspiel, Christophe Licitra, Patrice Gonon, C. Guerin, S. Beaurepair, P-L. Charvet, Névine Rochat, Marc Veillerot, D. Ney, Vincent Jousseaume

Publikováno v: IEEE Int. Interconnect Technology Conference (IITC)
IEEE Int. Interconnect Technology Conference (IITC), 2018, Santa Clara, United States. pp 61-63

This work presents an in-depth study of the thermal stability of low-k material in view of intermediate Back-End-Of-Line (iBEOL) for 3D sequential Integration. SiOCH ULK were analyzed after thermal annealing up to 600°C. Moreover, the stability and

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::44ed5abbfb3f02f569e74ad568ea315a
https://hal.univ-grenoble-alpes.fr/hal-01942970