Zobrazeno 1 - 10
of 31
pro vyhledávání: '"S. Banyoudeh"'
Autor:
I. Khanonkin, A. K. Mishra, O. Karni, V. Mikhelashvili, S. Banyoudeh, F. Schnabel, V. Sichkovskyi, J. P. Reithmaier, G. Eisenstein
Publikováno v:
AIP Advances, Vol 7, Iss 3, Pp 035122-035122-7 (2017)
The charge carrier dynamics of improved InP-based InAs/AlGaInAs quantum dot (QD) semiconductor optical amplifiers are examined employing the multi-wavelength ultrafast pump-probe measurement technique. The transient transmission response of the conti
Externí odkaz:
https://doaj.org/article/4ddacbf0ba1e4ed39eed7d1096edecbe
Autor:
Gadi Eisenstein, A. Abdollahinia, S. Banyoudeh, Florian Schnabel, Vitalii Sichkovskyi, Johann Peter Reithmaier, Ori Eyal
Publikováno v:
IEEE Photonics Technology Letters. 28:2451-2454
Modulation properties and temperature stability of short cavity ridge waveguide lasers based on high-quality InAs quantum dots exhibiting a total modal gain of ~90 cm -1 are reported. The 338-μm-long lasers show a threshold current of 20 mA at room
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d54370f9e0eed1630f8972a8f1cf0fdd
https://doi.org/10.1109/lpt.2016.2600508
https://doi.org/10.1109/lpt.2016.2600508
Autor:
S. Banyoudeh, Johann Peter Reithmaier, Vitalii Sichkovskyi, Ori Eyal, Gadi Eisenstein, Vissarion Mikhelashvili, Sutapa Ghosh, Igor Khanonkin
Publikováno v:
2018 IEEE International Semiconductor Laser Conference (ISLC).
Electrical characteristics: I-V and C-V of InAs/InP quantum-dot lasers are analyzed and yield important parameters. The origin of the nonlinear I-V curve, the dot density and the number of carriers per dot are examples of what parameters can be extra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1f387ada6f560f1dadcdb07ac169fb32
https://doi.org/10.1109/islc.2018.8516206
https://doi.org/10.1109/islc.2018.8516206
Autor:
A, Abdollahinia, S, Banyoudeh, A, Rippien, F, Schnabel, O, Eyal, I, Cestier, I, Kalifa, E, Mentovich, G, Eisenstein, J P, Reithmaier
Publikováno v:
Optics express. 26(5)
Static and dynamic properties of InP-based 1.55 µm quantum dot (QD) lasers were investigated. Due to the reduced size inhomogeneity and a high dot density of the newest generation of 1.55 µm QD gain materials, ridge waveguide lasers (RWG) exhibit i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::de4030c69b86b02d46dfff1236adc40c
https://pubmed.ncbi.nlm.nih.gov/29529801
https://pubmed.ncbi.nlm.nih.gov/29529801
Autor:
S. Banyoudeh, Johann Peter Reithmaier
Publikováno v:
Journal of Crystal Growth. 425:299-302
Self-assembled InAs quantum dots (QDs) were grown by solid source molecular beam epitaxy. The impact of the growth parameters like the growth temperature of the InGaAlAs nucleation layer, V/III ratio and growth rate during growth of QD layers were ca
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dac60eaba4f7c570bd0af36ff62d3b01
https://doi.org/10.1016/j.jcrysgro.2015.03.027
https://doi.org/10.1016/j.jcrysgro.2015.03.027
Autor:
A. Abdollahinia, Gadi Eisenstein, S. Banyoudeh, Florian Schnabel, Vitalii Sichkovskyi, Ori Eyal, Johann Peter Reithmaier
Publikováno v:
SPIE Proceedings.
An overview is given about the recent improvement in 1.55 μm QD lasers for direct modulation. Based on improved QD epitaxy, which reduces the inhomogeneous size distribution, record values in small signal modulation bandwidth of more than 15 GHz and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6bab7b78ca5d62938fbfdd78a0e02d94
https://doi.org/10.1117/12.2255749
https://doi.org/10.1117/12.2255749
Publikováno v:
Surface Science. 621:82-87
Vicinal semi-metallic Bi-films are expected to reveal topologically protected edge states. In this study the growth of Bi-multilayer structures on Si(557) substrates has been investigated by low energy electron diffraction. Thereby, wetting layer str
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8741a0c20a2df9e8fbfe5c6ae4ed94a8
https://doi.org/10.1016/j.susc.2013.10.024
https://doi.org/10.1016/j.susc.2013.10.024
Publikováno v:
SPIE Proceedings.
Self-organized InAs quantum dot (QD) lasers based on InP substrate were grown by means of solid source molecular beam epitaxy (SSMBE). Six InAs QD layers with high dot density and highly uniform dot sizes were used as active medium. Broad area (BA) a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f873dd7f2b0349caa8e09da8080bad4a
https://doi.org/10.1117/12.2209085
https://doi.org/10.1117/12.2209085
Autor:
Ori Eyal, Florian Schnabel, Vitalii Sichkovskyi, Gadi Eisenstein, Johann Peter Reithmaier, S. Banyoudeh, A. Abdollahinia
Publikováno v:
SPIE Proceedings.
Due to the discrete density of states distribution and spatial localization of carriers in quantum dot (QD) material, the dynamics should be strongly enhanced in comparison to quantum well material. Based on improved 1.5 μm InAs/InGaAlAs/InP QD gain
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bfa7a0f490fd1b37153524077c3836ac
https://doi.org/10.1117/12.2209095
https://doi.org/10.1117/12.2209095
Autor:
A. Abdollahinia, Gadi Eisenstein, S. Banyoudeh, Florian Schnabel, Johann Peter Reithmaier, Ori Eyal
Publikováno v:
Conference on Lasers and Electro-Optics.
We report temperature insensitive high speed InAs/InP quantum dot lasers. At 14°C-60°C, the bandwidth is respectively 15–13GHz, at 8°C it is 8GHz. 25Gbit/s under constant drive parameters at 14–60°C and 32Gbit/s at 14°C were demonstrated.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7b2530e05ccf27fb08311b8b77b78c55
https://doi.org/10.1364/cleo_si.2016.sm4r.1
https://doi.org/10.1364/cleo_si.2016.sm4r.1