Zobrazeno 1 - 10
of 67
pro vyhledávání: '"S. Bala Kumar"'
Publikováno v:
IOP Conference Series: Materials Science and Engineering. 1128:012029
Titanium Metal Matrix Composites have high specific strength and offer high stiffness compared with Nickel alloys and steel. While maintaining equivalent strength, it can reduce 50% weight relative to other super alloys. In this work, preparation of
Autor:
Jing Guo, S. Bala Kumar
Publikováno v:
Journal of Computational Electronics. 12:165-169
Using bilayer-graphene (BG), monolayer-graphene (MG), and hydrogenated-bilayer-graphene (hBG), we study the performance of three different pseudospinvalve (PSV) junctions: (1) BG-BG, (2) MG-BG, and (3) hBG-BG, modulated by vertical electric-field. Al
Autor:
S. Bala Kumar, Jing Guo
Publikováno v:
Nano Letters. 12:1362-1366
Grain boundaries (GBs) are ubiquitous in polycrystalline graphene materials obtained by various growth methods. It has been shown previously that considerable electrical transport gap can be opened by grain boundaries. On the other hand, polycrystall
Publikováno v:
Nano Research. 5:164-171
We examine the performance limits of field-effect transistors (FETs) with chemically modified graphene as the channel materials. Graphene nanoroad (XNR) and graphene nanomesh (XNM) can be created through selective chemical modification by an X adsorb
Publikováno v:
IEEE Transactions on Electron Devices. 58:3042-3047
The performance limits of monolayer transition metal dichalcogenide transistors are examined with a ballistic MOSFET model. Using ab-initio theory, we calculate the band structures of two-dimensional (2D) transition metal dichalco-genide (MX2). We fi
Autor:
Ganesh S. Samudra, S. Bala Kumar, Sai-Kong Chin, Kai-Tak Lam, Gengchiau Liang, Dawei Seah, Yee-Chia Yeo
Publikováno v:
IEEE Electron Device Letters. 31:555-557
The device physics and performance of heterojunction (HJ) graphene-nanoribbon (GNR) tunneling field-effect transistors (TFETs) with different designs are investigated in this letter. Due to the width-dependent energy bandgap (EG), a single GNR with s
Publikováno v:
Journal of Magnetism and Magnetic Materials. 310:e635-e637
We study the effects of the interfacial conductivity σ i and spin asymmetry γ at the boundaries between the ferromagnetic (FM) and nonmagnetic layers of a current perpendicular-to-plane spin-valve trilayer, based on the semi-classical drift-diffusi
Autor:
Ali Javey, S. Bala Kumar, Yu-Lun Chueh, Jing Guo, Junghyo Nah, Sanjay Krishna, Elena Plis, Hui Fang, Yu Ze Chen
We investigate the role of quantum confinement on the performance of gas sensors based on two-dimensional InAs membranes. Pd-decorated InAs membranes configured as H2 sensors are shown to exhibit strong thickness dependence, with ~100x enhancement in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e17b2b520692d2f5f6e5f2e988c25e1f
http://arxiv.org/abs/1204.4461
http://arxiv.org/abs/1204.4461
Autor:
S. Bala Kumar, Jing Guo
We study the effect of chiral-tunneling in Bernal and Rombhohedral stacked trilayer-graphene (3LG). Based on the chirality of the electronic bands, at the K-point, (Rombhohedral) Bernal-3LG exhibits 100% (50%) transparency across a heterojunction. Ut
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3431c1a46020f58344149793b668990e
http://arxiv.org/abs/1204.0961
http://arxiv.org/abs/1204.0961
Autor:
S. Bala Kumar, Jing Guo
Publikováno v:
Nanoscale. 4(3)
We model a very large, tunable magnetoresistance (MR) in a graphene nanoribbon field-effect transistor, without artificial engineering of ferromagnetic contacts. A high MR of nearly 100% (about 50%) is obtained at low temperature (room temperature).