Zobrazeno 1 - 3
of 3
pro vyhledávání: '"S. B. Vishwakarma"'
Autor:
Vidya Jadhav, S.K. Dubey, R. L. Dubey, I. Sulania, Dinakar Kanjilal, S. B. Vishwakarma, V. Bambole, K. Devarani Devi, A.D. Yadav
Publikováno v:
Radiation Effects and Defects in Solids. 175:695-703
Thermally grown SiO2 thin films on a silicon substrate implanted with 100 keV silicon negative ions with fluences varying from 1 × 1015 to 2 × 1017 ions cm−2 have been investigated using Electron s...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dc4faae9129115bbc6da2d1a46d01169
https://doi.org/10.1080/10420150.2020.1756812
https://doi.org/10.1080/10420150.2020.1756812
Publikováno v:
AIP Conference Proceedings.
100 keV silicon negative ions implanted SiO2 thin films with fluences varying from 1 x 10 15 to 2 x 10 17 ion cm−2 were investigated using Electron spin resonance (ESR) at low temperature and Energy dispersive X-ray spectroscopy (EDX) techniques. E
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0df22d30bac4b745b76f1d06ca2ad080
https://doi.org/10.1063/5.0002215
https://doi.org/10.1063/5.0002215
Autor:
D. Kanjilal, S. B. Vishwakarma, A.D. Yadav, I. Sulania, V. Bambole, Vidya Jadhav, R. L. Dubey, S.K. Dubey
Publikováno v:
AIP Conference Proceedings.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a9872184ec7b2c92e2f580321fd54227
https://doi.org/10.1063/1.5028741
https://doi.org/10.1063/1.5028741