Výsledky vyhledávání - "S. B. Shirapov"

Influence of temperature on the mechanism of carrier injection in light-emitting diodes based on InGaN/GaN multiple quantum wells

Autor: I. A. Prudaev, I. S. Romanov, S. S. Khludkov, I. Yu. Golygin, O. P. Tolbanov, S. B. Shirapov

Publikováno v: Semiconductors. 47:1382-1386

The experimental current-voltage characteristics and dependences of the external quantum yield on the current density of light-emitting diodes based on InGaN/GaN multiple quantum wells for the wide temperature range T = 10–400 K are presented. It i

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::0cd7589b942ee592f04731737f154611
https://doi.org/10.1134/s1063782613100230

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Temperature Dependence of the Quantum Efficiency of Structures with Multiple Quantum Wells InGaN / GaN Under Photo- and Electroluminescence

Autor: V. V. Kop’ev, S. S. Khludkov, О. P. Тоlbanov, I. A. Prudaev, I. S. Romanov, S. B. Shirapov

Publikováno v: Russian Physics Journal. 56:757-759

In the present work, the external quantum efficiency of the blue LED- structures based on InGaN/GaN is studied as a function of the current density (or intensity of optical excitation) under electroluminescence (or photoluminescence) at different tem

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::5262df98ad8779af4190226590e2e546
https://doi.org/10.1007/s11182-013-0096-3

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