Zobrazeno 1 - 10
of 24
pro vyhledávání: '"S. B. Samavedam"'
Autor:
Serge Biesemans, S. B. Samavedam, Julien Ryckaert, Eric Beyne, Naoto Horiguchi, Alessio Spessot, Iuliana Radu, M. H. Na, Kurt G. Ronse, Marie Garcia Bardon, Zsolt Tokei
Publikováno v:
2020 IEEE International Electron Devices Meeting (IEDM).
With each new node, cost and complexity of logic technology increases while being challenged to provide the historical expected improvement in performance. This paper reviews the latest trends and advances in technology to enable logic scaling. Dimen
Autor:
David Burnett, C. Jerome, K. J. Lee, J. G. Lee, W. Hong, Kwan-Yong Lim, D. K. Sohn, S. Y. Mun, H. C. Lo, Y. J. Shi, O. Hu, J. Versaggi, Sanjay Parihar, S. B. Samavedam
Publikováno v:
2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S).
14nm node SRAM using FinFETs with advanced Replacement Metal Gate (RMG) module shows sensitive Access Distuib Margin (ADM) response to Local Layout Effect (LLE) as seen in planar CMOS technology using RMG [1]. Additionally, 14nm FinFET technology has
Publikováno v:
Journal of Applied Physics. 86:2571-2575
The phase sequence of the rapid thermal processing induced reaction at T=650 °C has been studied by a combination of high resolution transmission electron microscopy and image simulations. We found that pre-amorphization of poly-Si substrates does n
Autor:
Christopher W. Leitz, Mayank T. Bulsara, Eugene A. Fitzgerald, Gianni Taraschi, Matthew T. Currie, Vicky K. Yang, Thomas A. Langdo, S. B. Samavedam
Publikováno v:
physica status solidi (a). 171:227-238
Recent advances in the understanding and control of threading dislocations in substantially relaxed SiGe buffer layers on Si are presented. A model for threading dislocation flow in relaxed graded SiGe buffers is used to determine the potential lower
Publikováno v:
Thin Solid Films. 332:404-411
The scaling of CMOS technologies to 0.10 μm and beyond imposes increasingly demanding constraints to self-aligned silicide (salicide) processes. For high performance devices, it is essential that salicide processes achieve low gate and source-drain
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 15:1048-1056
Under typical growth conditions, strain levels greater than or equal to 10−4 are shown to influence thin film surface morphology and strain relaxation pathways. Misfit and threading dislocations in relaxed heterostructures produce long wavelength u
Autor:
J. Yuan, C. Gruensfelder, K. Y. Lim, T. Wallner, M. K Jung, M. J. Sherony, Y. M. Lee, J. Chen, C. W. Lai, Y.T. Chow, K. Stein, L. Y. Song, H. Onoda, C. W. An, H. Wang, B. K. Moon, J. Kim, H. Inokuma, H. Yamasaki, J. Shah, H.V. Meer, S. B. Samavedam, Q. T. Zhang, C. Zhu, Y. Park, Y. E. Lim, R. Nieuwenhuizen, J. P. Han, M. Hamaguchi, W.L. Lai, M. P. Belyansky, O. Gluschenkov, S. Johnson, R. Divakaruni, E. F. Kaste, J. Sudijono, J. H. Ku, F. Matsuoka, W. Neumueller, R. Sampson, M. Sekine, A. Steegen
Publikováno v:
2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology.
In this paper, we describe the performance elements used in our 28nm bulk devices with the gate first high-k/metal gate scheme for high performance applications. By using the innovative stressor integrations including improved stress memory technique
Publikováno v:
Applied Physics Letters. 73:2125-2127
The integration of Ge photodetectors on silicon substrates is advantageous for various Si-based optoelectronics applications. We have fabricated integrated Ge photodiodes on a graded optimized relaxed SiGe buffer on Si. The dark current in the Ge mes
Autor:
Michael A. Sadd, W.J. Taylor, C. Capasso, Matthew W. Stoker, S. Kalpat, James K. Schaeffer, D. Triyoso, D. Roan, A. Haggag, S. B. Samavedam, David C. Gilmer, Rama I. Hegde, B. E. White
Publikováno v:
Extended Abstracts of the 2007 International Conference on Solid State Devices and Materials.
Publikováno v:
Applied Physics Letters. 73:900-902
X-ray diffraction, high resolution transmission electron microscopy, and resistivity measurements were used to demonstrate a modification of the Ti/Si reaction path consisting of direct nucleation followed by diffusion limited growth of low resistivi