Zobrazeno 1 - 6
of 6
pro vyhledávání: '"S. B. Saban"'
Publikováno v:
Journal of Crystal Growth. 141:343-346
Semi-insulating GaAs grown by the vertical zone melting (VZM) method has a low density of etch pits (about (1–4)×103 cm-2), but a low concentration of EL2 (about 7×1015 cm-3). We find that annealing VZM GaAs by either a two-step or by a one-step
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bc59d98355eeb5ec745b73ab53dea9a0
https://doi.org/10.1016/0022-0248(94)90235-6
https://doi.org/10.1016/0022-0248(94)90235-6
Publikováno v:
Journal of Applied Physics. 73:7416-7421
Optical and electrical properties are described for bulk GaAs, grown from a melt doped with iron to create FeGa deep acceptors in a sufficient amount (exceeding the EL2 defect concentration) to make high‐resistivity p‐type rather than semi‐insu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8a32affc1c8fb0b69f80dfb2ff222256
https://doi.org/10.1063/1.354006
https://doi.org/10.1063/1.354006
Publikováno v:
Journal of Applied Physics. 73:3319-3325
As an acceptor dopant with a solid:liquid distribution coefficient ks
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c028a07be18aa47a97f7f8b35850b399
https://doi.org/10.1063/1.352981
https://doi.org/10.1063/1.352981
Publikováno v:
Physical Review B. 46:7229-7231
Heating semi-insulating GaAs in the presence of copper produces conversion to p type with the low-temperature Fermi level located on carbon at 26 meV above the valence band. As the EL2 concentration is much larger than the shallow-donor concentration
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::47539c767172d36a3ff7f5211d30ceaa
https://doi.org/10.1103/physrevb.46.7229
https://doi.org/10.1103/physrevb.46.7229
Publikováno v:
Journal of Applied Physics. 72:2505-2507
Room temperature measurements are reported of the mid‐infrared local vibrational mode (LVM) absorption caused by CAs acceptors in GaAs. A 30:1 range of carbon content was found among a group of 33 samples of melt‐grown semi‐insulating GaAs. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8b5fb6c5103f32bc54a085d62ab57e0a
https://doi.org/10.1063/1.351543
https://doi.org/10.1063/1.351543
Autor:
V. S. Sundaram, S. B. Saban, M. D. Morgan, W. E. Horne, B. D. Evans, J. R. Ketterl, M. B. Z. Morosini, N. B. Patel, H. Field
Publikováno v:
Third NREL Conference on thermophotovoltaic generation of electricity.
In this work we report the characteristics of ternary, GaInSb (Eg=0.70 eV) and quarternary, GaInAsSb (Eg=0.5 eV) diffused junction photovoltaic devices. The unique feature of the quarternary device is the extended long-wavelength response to 2.1 micr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::178cda1942d3a91b92f243657a15fc77
https://doi.org/10.1063/1.53277
https://doi.org/10.1063/1.53277