Zobrazeno 1 - 10
of 38
pro vyhledávání: '"S. B. Lastovskii"'
Publikováno v:
High Energy Chemistry. 57:247-251
Autor:
A. A. Kharchenko, Yu. A. Fedotova, I. A. Zur, D. I. Brinkevich, S. D. Brinkevich, E. V. Grinyuk, V. S. Prosolovich, S. A. Movchan, G. E. Remnev, S. A. Linnik, S. B. Lastovskii
Publikováno v:
High Energy Chemistry. 56:354-362
Publikováno v:
Journal of Applied Spectroscopy. 87:1072-1078
Radiation-induced effects in thin films of diazoquinone–novolac photoresists on silicon irradiated with high-energy electrons (~5 MeV) were investigated by frustrated total internal reflection (FTIR) IR Fourier spectroscopy. It was found that irrad
Modeling of paths and energy losses of high-energy ions in single-layered and multilayered materials
Autor:
S. S. Grabchikov, E. A. Grabchikova, D. S. Vasin, D. I. Tishkevich, S. B. Lastovskii, A. S. Yakushevich, Y. V. Bogatyrev, I. V. Kalagin, S. V. Mitrofanov
Publikováno v:
Proceedings of the National Academy of Sciences of Belarus, Physical-Technical Series. 65:25-34
Linear and mass ranges of protons and argon ions in aluminum, alumina, bismuth, and W77.7Cu22.3 composite shields were calculated using the SRIM software package. It is shown that the protection efficiency against high-energy ions by materials with l
Autor:
H. S. Yakushevich, Michael Moll, L.I. Murin, Leonid Makarenko, S. B. Lastovskii, Je. A. Pavlov, Eugenijus Gaubas
Publikováno v:
Proceedings of the National Academy of Sciences of Belarus. Physics and Mathematics Series. 54:220-228
With the use of deep level transient spectroscopy (DLTS) the effect of injection of minority charge carriers (electrons) on an annealing rate of self di-interstitial – oxygen (I2O) complex in silicon has been studied. The complex has been formed by
Publikováno v:
Semiconductors. 50:751-755
The method of deep level transient spectroscopy is used to study electrically active defects in p-type silicon crystals irradiated with MeV electrons and α particles. A new radiation-induced defect with the properties of bistable centers is determin
Publikováno v:
Semiconductors. 48:1456-1462
It is shown experimentally that, in contrast to the stable configuration of (interstitial carbon)-(interstitial oxygen) complexes (CiOi), the corresponding metastable configuration (CiOi*) cannot be found in n-Si based structures by the method of cap
Publikováno v:
physica status solidi (a). 211:2558-2562
Using forward current injection with densities in the range 15–30 A/cm2 we can effectively eliminate the radiation-induced boron–oxygen complex, which is the main compensating center in irradiated Si solar cells. It was found that for a given for
Structure, Electronic Properties and Annealing Behaviour of Di-Interstitial Oxygen Center in Silicon
Autor:
Vasilii Gusakov, Naveengoud Ganagona, Anthony R. Peaker, Vladimir P. Markevich, Edouard Monakhov, Bengt Gunnar Svensson, Bruce Hamilton, S. B. Lastovskii, L.I. Murin
Publikováno v:
Hamilton, B, Peaker, A & Markevich, V 2016, ' Structure, Electronic Properties and Annealing Behaviour of Di-Interstitial Oxygen Center in Silicon ', Solid State Phenomena, vol. 242, pp. 290-295 . https://doi.org/10.4028/www.scientific.net/SSP.242.290
It is argued in this work that a DLTS signal associated with hole emission from a radiation-induced defect with an energy level at Ev + 0.09 eV is related to a complex of silicon di-interstitial with an oxygen atom (I2O). This signal has been observe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::41d7857c0b2ca80dfca234977964d9fb
https://www.research.manchester.ac.uk/portal/en/publications/structure-electronic-properties-and-annealing-behaviour-of-diinterstitial-oxygen-center-in-silicon(48e5493b-fba0-4716-8381-be7ed76833cd).html
https://www.research.manchester.ac.uk/portal/en/publications/structure-electronic-properties-and-annealing-behaviour-of-diinterstitial-oxygen-center-in-silicon(48e5493b-fba0-4716-8381-be7ed76833cd).html
Autor:
Bruce Hamilton, Patrick R. Briddon, Anthony R. Peaker, A.V. Markevich, Vladimir P. Markevich, Mark Rayson, José Coutinho, Bengt Gunnar Svensson, S. B. Lastovskii, L.I. Murin
Publikováno v:
Physica B: Condensed Matter. 407:2974-2977
Disappearance of the divacancy ( V 2 ) and trivacancy ( V 3 ) complexes upon isochronal and isothermal annealing of electron irradiated Si:O crystals has been studied by means of deep level transient spectroscopy. The annealing studies have shown tha