Zobrazeno 1 - 5
of 5
pro vyhledávání: '"S. B. Lastovski"'
Autor:
N. A. Poklonski, A. I. Kovalev, K. V. Usenko, E. A. Ermakova, N. I. Gorbachuk, S. B. Lastovski
Publikováno v:
Pribory i Metody Izmerenij, Vol 14, Iss 1, Pp 38-43 (2023)
In silicon microelectronics, flat metal spirals are formed to create an integrated inductance. However, the maximum specific inductance of such spirals at low frequencies is limited to a value of the order of tens of microhenries per square centimete
Externí odkaz:
https://doaj.org/article/b467361c5fc34f5e9543b95ba56d7e99
Autor:
V. V. Uglov, N. T. Kvasov, V. M. Astashynski, Yu. A. Petukhou, A. M. Kuzmitski, I. L. Doroshevich, S. B. Lastovski
Publikováno v:
Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki, Vol 0, Iss 2, Pp 21-25 (2019)
Photovoltaic effect in silicon doped by the action of compression plasma pulses is investigated for the first time. Plasma treatment parameters providing maximum values of photo-emf are optimized. Dependences of photo-emf on the dose of electron high
Externí odkaz:
https://doaj.org/article/3d9c809346d245488d0377e3a1ec9beb
Publikováno v:
Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki, Vol 0, Iss 4, Pp 105-110 (2019)
Influence of gamma radiation Co60 on static and dynamic characteristics of the transresistance amplifier and the comparator realized on the master slice array «ABMK 1-3» is considered taking into account formulated design rule. At absorbed dose D =
Externí odkaz:
https://doaj.org/article/9967ba88ecb042e1959739b53a56fc1e
Publikováno v:
Infocommunications and Radio Technologies. 2:22-32
The relaxation processes appeared in condenser and transistor MOS structures, СМОS integrated circuits on their basis, and also bipolar transistor structures, irradiated by fast electrons with energy of 4 MeV or gamma-quantum’s Co60 are observed
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5a7291e1388a87d9e5ee3beec5ce58eb
https://doi.org/10.15826/icrt.2019.02.1.03
https://doi.org/10.15826/icrt.2019.02.1.03
Publikováno v:
Infocommunications and Radio Technologies. 1:95-102
The results of calculation-experimental determination (forecasting) of two types of CMOS-integrated microcircuits’ radiation hardness (interface transceivers, memory units) under the influence of Co60 gamma radiation are submitted. Analytical dose
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7ab5b9c9cba3bf974c925ac38809caa2
https://doi.org/10.15826/icrt.2018.01.1.07
https://doi.org/10.15826/icrt.2018.01.1.07