Zobrazeno 1 - 6
of 6
pro vyhledávání: '"S. B. Kushev"'
Publikováno v:
Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques. 13:371-377
We carry out comparative studies of the phase composition, morphology, and hardness of semiconductor legs based on the n-type solid solution Bi2Te3−Bi2Se3, obtained by hot pressing, after surface modification (mechanical processing and pulsed photo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3a8c75e7985819cae74c63b7832b0013
https://doi.org/10.1134/s1027451019030054
https://doi.org/10.1134/s1027451019030054
Autor:
S. B. Kushev, M. P. Sumez, V. M. Ievlev, M. N. Bezryadin, Oleg V. Ovchinnikov, S. V. Kannykin, A. M. Vozgorkov, A. N. Latyshev, M. S. Smirnov, L. Yu. Leonova
Publikováno v:
Semiconductors. 48:251-256
The structure and electrical and optical properties of heterostructures formed on the surface of single-crystal silicon wafers as a result of the heat treatment and pulsed photon treatment of Ti films in oxygen, air, and nitrogen are investigated. It
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f0f5ae00877c9ee62b9c376da8b1df55
https://doi.org/10.1134/s1063782614020110
https://doi.org/10.1134/s1063782614020110
Publikováno v:
Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques. 3:791-796
The phase composition, orientation, substructure, and morphology of the films formed during pulsed photon treatment of a single-crystal Si surface by xenon lamp irradiation (λ = 0.2–1.2 µm) and polycrystalline Si films on SiO2-Si in a gaseous atm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::71fb8fe4650bbb61efbb6598d320980a
https://doi.org/10.1134/s102745100905022x
https://doi.org/10.1134/s102745100905022x
Autor:
Yu. A. Yurakov, Stanislav V. Ryabtsev, S. B. Kushev, O. A. Chuvenkova, E. P. Domashevskaya, S. Yu. Turishchev, A. N. Lukin, V. M. Kashkarov
Publikováno v:
Thin Solid Films. 515:6350-6355
Nanocrystalline films of metal tin with a thickness of 30, 100 nm were annealed in the air for 1 h at constant temperatures varying from 170 to 750 °C. Transmission electron microscopy and X-ray absorption near edge structure experimental data show
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ba327d6f206ac58d718a10dc79306bb1
https://doi.org/10.1016/j.tsf.2006.11.092
https://doi.org/10.1016/j.tsf.2006.11.092
Autor:
S. B. Kushev, O. A. Chuvenkova, E. P. Domashevskaya, V. M. Kashkarov, S. Yu. Turishchev, Yu. A. Yurakov, Stanislav V. Ryabtsev
Publikováno v:
Surface and Interface Analysis. 38:514-517
TEM, XANES and optical investigations show that tin film oxidation starts with the formation of tetragonal tin monoxide, which is converted to unstable orthorhombic tin dioxide with the increase of annealing temperature, transferring, in its turn, in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b730d355453b5e5d6ec758e3ae830bc3
https://doi.org/10.1002/sia.2307
https://doi.org/10.1002/sia.2307
Publikováno v:
Scopus-Elsevier
Transmission electron microscopy observations of the interfacial structures formed between epitaxial gold overgrowths on (001) and (111) platinum substrates arc reported. Both continuous layer and island structures, each with associated misfit disloc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::181bba0fef556216b20a858370e7f9a8
https://doi.org/10.1080/01418618208236195
https://doi.org/10.1080/01418618208236195