Zobrazeno 1 - 10
of 517
pro vyhledávání: '"S. B. Krupanidhi"'
Autor:
Rohit Pant, Deependra Kumar Singh, Arun Malla Chowdhury, Basanta Roul, K. K. Nanda, S. B. Krupanidhi
Publikováno v:
APL Materials, Vol 8, Iss 2, Pp 020907-020907-11 (2020)
Energy consumption is one of the most important aspects of any electronic device which needs further improvements in order to achieve a better sustainable future. This is equally true for commercially available photodetectors, which consume a lot of
Externí odkaz:
https://doaj.org/article/9db050da25ef4a7684b56ad9914d2fcc
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 3, Iss 3, Pp 244-253 (2015)
Thin films of CuIn1-xAlxSe2 (CIAS) were grown on the flexible 10 micrometer thin stainless steel substrates, by dc co-sputtering from the elemental cathodes, followed by annealing with modified selenization. CuInAl alloyed precursor films were seleni
Externí odkaz:
https://doaj.org/article/5e6fdb7060974af49e106578a158e3a5
Autor:
Sandra Dias, S. B. Krupanidhi
Publikováno v:
AIP Advances, Vol 6, Iss 2, Pp 025217-025217-11 (2016)
The Cu2SnS3 thin films were deposited using an economic, solution processible, spin coating technique. The films were found to possess a tetragonal crystal structure using X-ray diffraction. The film morphology and the particle size were determined u
Externí odkaz:
https://doaj.org/article/0dff3f0cd0084b1f8617d16b59756e08
Autor:
Shruti Mukundan, Basanta Roul, Arjun Shetty, Greeshma Chandan, Lokesh Mohan, S. B. Krupanidhi
Publikováno v:
AIP Advances, Vol 5, Iss 12, Pp 127208-127208-7 (2015)
Nonpolar a-GaN (11-20) epilayers were grown on r-plane (1-102) sapphire substrates using plasma assisted molecular beam epitaxy. High resolution x-ray diffractometer confirmed the orientation of the grown film. Effect of the Ga/N ratio on the morphol
Externí odkaz:
https://doaj.org/article/9a563e03bcd2433fbe53e5595e2ec9fe
Autor:
Arjun Shetty, Basanta Roul, Shruti Mukundan, Lokesh Mohan, Greeshma Chandan, K. J. Vinoy, S. B. Krupanidhi
Publikováno v:
AIP Advances, Vol 5, Iss 9, Pp 097103-097103-11 (2015)
This paper reports an improvement in Pt/n-GaN metal-semiconductor (MS) Schottky diode characteristics by the introduction of a layer of HfO2 (5 nm) between the metal and semiconductor interface. The resulting Pt/HfO2/n-GaN metal-insulator-semiconduct
Externí odkaz:
https://doaj.org/article/fdedd8ef75f54b0da4879fe366105940
Determination of band offsets at the Al:ZnO/Cu2SnS3 interface using X-ray photoelectron spectroscopy
Autor:
Sandra Dias, S. B. Krupanidhi
Publikováno v:
AIP Advances, Vol 5, Iss 4, Pp 047137-047137-10 (2015)
The Al:ZnO/Cu2SnS3 semiconductor heterojunction was fabricated. The structural and optical properties of the semiconductor materials were studied. The band offset at the Al:ZnO/Cu2SnS3 heterojunction was studied using X-ray photoelectron spectroscopy
Externí odkaz:
https://doaj.org/article/1e8b366885dd429597f6413b2357cfbb
Autor:
Shruti Mukundan, Lokesh Mohan, Greeshma Chandan, Basanta Roul, S. B. Krupanidhi, Satish Shinde, K. K. Nanda, R. Maiti, S. K. Ray
Publikováno v:
AIP Advances, Vol 5, Iss 3, Pp 037112-037112-9 (2015)
Studies on the optical properties of InGaN alloy of relatively higher indium content are of potential interest to understand the effect of indium content on the optical band gap of epitaxial InGaN. We report the growth of self assembled non-polar hig
Externí odkaz:
https://doaj.org/article/fbbd9502d4b94fc08cca3484c4ab0bf8
Publikováno v:
AIP Advances, Vol 5, Iss 3, Pp 037130-037130-12 (2015)
We have grown InGaN/GaN heterostructures using plasma-assisted molecular beam epitaxy and studied the temperature dependent electrical transport characteristics. The barrier height (φb) and the ideally factor (η) estimated using thermionic emission
Externí odkaz:
https://doaj.org/article/c3e90571af254e8685a672a596575c3c
Autor:
Sandra Dias, S. B. Krupanidhi
Publikováno v:
AIP Advances, Vol 4, Iss 3, Pp 037121-037121-13 (2014)
The temperature dependent electrical properties of the dropcasted Cu2SnS3 films have been measured in the temperature range 140 K to 317 K. The log I versus √V plot shows two regions. The region at lower bias is due to electrode limited Schottky em
Externí odkaz:
https://doaj.org/article/76daa26c26574fcfaf73330bb9e78c04
Publikováno v:
AIP Advances, Vol 3, Iss 8, Pp 082132-082132 (2013)
The thin films of Cu2ZnSnS4 (CZTS) were grown by co-sputtering further the structural, optical and electrical properties were analyzed and confirmed the CZTS phase formation. The photo response of CZTS in near IR photodectection has been demonstrated
Externí odkaz:
https://doaj.org/article/7e3f8c3540204ab99d61d119684ad8eb