Zobrazeno 1 - 10
of 22
pro vyhledávání: '"S. B. Isamov"'
Publikováno v:
Surface Engineering and Applied Electrochemistry. 59:210-215
Autor:
S. V. Koveshnikov, S. B. Isamov, Kh. M. Iliev, M. K. Bakhadirkhanov, M. Kh. Majitov, M. O. Tursunov
Publikováno v:
Inorganic Materials. 57:655-662
We have studied the properties of KDB-5 silicon diffusion-doped with manganese in the temperature range 1100–1300°C. The results demonstrate that raising the diffusion temperature in the range 1175–1300°C leads to a decrease in the concentratio
Publikováno v:
Semiconductors. 55:542-545
Publikováno v:
Semiconductors. 56:29-31
Publikováno v:
Technical Physics Letters. 46:1192-1195
It is shown that the photoresponse threshold and photosensitivity in a photoresistor material based on silicon doped with manganese atoms with the formation of the Mn4B nanoclusters can be changed by varying the electric field in the range of 0.1–3
Autor:
G. Kh. Mavlonov, S. V. Koveshnikov, M. K. Bakhadirkhanov, N. F. Zikrillaev, Sh. N. Ibodullaev, Kh. M. Iliev, S. B. Isamov
Publikováno v:
Surface Engineering and Applied Electrochemistry. 56:734-739
The paper reports that silicon with nanoclusters of manganese atoms has unique electrical, photoelectric, magnetic, and photomagnetic properties that are absent in ordinary doped semiconductor materials. The samples revealed an anomalously high impur
Autor:
G. A. Ikhtiyarova, Kh. F. Zikrillayev, Z. T. Kenzhaev, D. Melebaev, S. B. Isamov, M. K. Bakhadyrkhanov
Publikováno v:
Applied Solar Energy. 56:13-17
By the diffusion obtained the Si 〈B, P〉 (group I) and Si 〈B, P + Ni〉 (group II) structures with deep p–n-junctions. It is demonstrated that the parameters of silicon photovoltaic cells with deep p–n-junctions are improved due to nickel do
Publikováno v:
Technical Physics Letters. 45:959-962
It has been shown that the doping of the front side of a solar cell with a deep-level p–n junction with nickel atoms increases short-circuit current density Jsc by 89% and open-circuit voltage Voc by 19.7%. Additional thermal treatment at 700°C fo
Autor:
S. B. Isamov, S. A. Tachilin, M. K. Bakhadyrkhanov, G. Kh. Mavlonov, Kh. M. Iliev, K. S. Ayupov
Publikováno v:
Technical Physics. 64:385-388
Photosensitivity of the negative magnetoresistance (NMR) of silicon containing magnetic nanoclusters of manganese atoms is revealed under background and IR (up to λ = 3 μm) irradiation at room temperature. It is shown that irradiation leads to a si
Autor:
M. K. Bakhadyrkhanov, S. B. Isamov
Publikováno v:
Technical Physics. 61:458-460
The spectral dependence of the photoconductivity of silicon with multiply charged manganese nanoclusters is studied at different background currents. The spectral ranges where the IR quenching of the photoconductivity takes place and a shift in the p