Zobrazeno 1 - 10
of 32
pro vyhledávání: '"S. B. Herner"'
Publikováno v:
Applied Physics Letters. 110:223901
Optical rectennas for infrared energy harvesting commonly incorporate metal/double-insulator/metal diodes. Required diode characteristics include high responsivity and low resistance near zero bias with a sub-micron area, which have not been obtainab
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::894bbe1f6167eb268aad88d7f83cc347
https://doi.org/10.1063/1.4984278
https://doi.org/10.1063/1.4984278
Autor:
Lourdes Pelaz, D. J. Eaglesham, S. B. Herner, Dale Conrad Jacobson, R. Simonton, H.-J. Gossmann, Aditya Agarwal, T. E. Haynes
Publikováno v:
Materials Science in Semiconductor Processing. 1:17-25
Continued use of ion implantation for doping of silicon integrated circuits will soon require implantation energies below 5 keV to form electrical junctions less than 50 nm deep. At such low energies, dopant diffusion and formation of extended defect
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::00ff03eb7c4e48a15b9a9663b32e7a3c
https://doi.org/10.1016/s1369-8001(98)00008-0
https://doi.org/10.1016/s1369-8001(98)00008-0
Autor:
S. B. Herner, V. L. Eckert
Publikováno v:
Electrochemical and Solid-State Letters. 9:G34-G36
The dopant diffusion barrier property of a chemically grown oxide (CGO) film has been characterized in polysilicon. The CGO film was grown by immersion of an amorphous Si film in a mixture of H 2 O 2 , NH 4 OH, and H 2 O liquids, heated to 55°C. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a00166ee1f23f823fc2a8495cbbd42d6
https://doi.org/10.1149/1.2146705
https://doi.org/10.1149/1.2146705
Publikováno v:
Journal of Applied Physics. 82:583-588
We have determined the perturbance in the silicon vacancy concentration induced by the presence of TiSi2 films. Antimony in silicon doping superlattices was employed as a vacancy detector. Under all conditions studied (deposited titanium thickness 4
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d8d1ad42aa8db223848235ebdba5b64b
https://doi.org/10.1063/1.365619
https://doi.org/10.1063/1.365619
Publikováno v:
Thin Solid Films. 302:127-132
Titanium disilicide (TiSi2) films formed from varying compositions of co-deposited Ti and Si on a Si substrate and annealed in argon at 850°C have been characterized by Rutherford backscattering, Auger electron spectroscopy, transmission electron mi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::994ce81ba469bbd78397da877de9b281
https://doi.org/10.1016/s0040-6090(96)09586-7
https://doi.org/10.1016/s0040-6090(96)09586-7
Publikováno v:
Applied Surface Science. 103:377-382
The behavior of end-of-range dislocation loops have been used to study the flux of point defects in Si after the formation of a TiSi 2 film. Extrinsic dislocation loops were formed in Si which then had 30 nm of Ti deposited and annealed to form TiSi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::762941bc2c1249dded58c21ff999b4b8
https://doi.org/10.1016/s0169-4332(96)00544-2
https://doi.org/10.1016/s0169-4332(96)00544-2
Autor:
S. V. Dunton, D. Kidwell, S. Radigan, A. Bandyopadhyay, J. Gu, S. B. Herner, M.A. Vyvoda, C. Jahn, U. Raghuram, V. L. Eckert, M. Konevecki, J. Vienna, C. Petti, M. Mahajani, K.J. Hsia, S. Hu, K. Park
Publikováno v:
IEEE Electron Device Letters. 25:271-273
A field-programmable, stackable memory cell using 0.15-/spl mu/m technology is demonstrated. Vertical polycrystalline silicon diodes are stacked on top of one another, with tungsten (with TiN adhesion film) interconnect wires. An SiO/sub 2/ antifuse
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::60989b3bc94a7da4c08bbed4c739f185
https://doi.org/10.1109/led.2004.827287
https://doi.org/10.1109/led.2004.827287
Publikováno v:
Applied Physics Letters. 82:4163-4165
A Schottky diode consisting of doped polycrystalline silicon (polysilicon) and CoSi2 films is described. When an SiO2 antifuse thin film is grown in between the polysilicon and CoSi2, the film stack can function as a nonvolatile one-time programmable
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::52ac4ceaedc0df1c5808bb8e6dad3f8b
https://doi.org/10.1063/1.1581364
https://doi.org/10.1063/1.1581364
Autor:
M. A. Vyvoda, S. B. Herner
Publikováno v:
Applied Physics Letters. 81:259-261
We have achieved low resistivity TiSi2 on 0.25 μm wide polysilicon lines doped to 5×1020/cm3 with boron by use of in situ doping of polysilicon. By controlling the Si deposition such that an amorphous undoped “cap” was deposited on p+ polycryst
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ef9c7c0181e8321dcb4e3ed49d67ec99
https://doi.org/10.1063/1.1492010
https://doi.org/10.1063/1.1492010
Autor:
S. B. Herner, Anthony T. Fiory, H.-J. Gossmann, Aditya Agarwal, D. J. Eaglesham, T. E. Haynes
Publikováno v:
Applied Physics Letters. 74:2435-2437
We have investigated the diffusion enhancement mechanism of boron-enhanced diffusion (BED), wherein boron diffusivity is enhanced four to five times over the equilibrium diffusivity at 1050 °C in the proximity of a silicon layer containing a high bo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1c23a31ed4758c078cce64167a88d73e
https://doi.org/10.1063/1.123872
https://doi.org/10.1063/1.123872