Výsledky vyhledávání

Pulse characterization of trapping and thermal effects of microwave GaN power FETs

Autor: S. Cassette, B. Dessertenne, S. Augaudy, Sylvain Delage, M.A. di Forte-Poisson, Jean-Pierre Teyssier, Raymond Quéré

Publikováno v: 2001 IEEE MTT-S International Microwave Sympsoium Digest (Cat. No.01CH37157).

An experimental characterization of GaN FETs is given in this paper. A pulsed I-V/pulsed S-parameters measurement set-up is used to investigate the trapping and thermal behavior of GaN MESFETs. It is shown that electrical performances are strongly af

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::e51111fbf4e2026e8f8d5b916099b9b5
https://doi.org/10.1109/mwsym.2001.966922

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Analysis of nonlinear memory effects on the linearity of a SiC MESFET

Autor: Raymond Quéré, S. Augaudy, Jean-Pierre Teyssier

Publikováno v: 32nd European Microwave Conference, 2002.

With experimental characterizations based on a pulsed I-V and pulsed S-parameters measurement set-up, we investigate the trapping and thermal behavior of SiC MESFETs. It is shown that electrical performances are strongly affected by substrate traps a

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::0f7f05a43b01cd1c9e275fc91bb3fb8a
https://doi.org/10.1109/euma.2002.339279

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Large-Signal Time Domain Characterization of Microwave Transistors under RF Pulsed Conditions

Autor: Denis Barataud, S. Augaudy, J.M. Nebus, Raymond Quéré, Jean-Pierre Teyssier

Publikováno v: 57th ARFTG Conference Digest.

This paper describes a time domain measurement technique of large-signal RF pulsed waveforms, based on Agilent Nonlinear Network Measurement System (NNMS). A transistor is biased under pulsed conditions and the RF is applied during bias pulses. The p

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::290bd3012254bbad7cc570831d1be204
https://doi.org/10.1109/arftg.2001.327460

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