Zobrazeno 1 - 10
of 74
pro vyhledávání: '"S. Aritome"'
Autor:
H. Fijita, S. Aritome, Y. Sakamoto, Ching Yuan Ho, Chenhsin Lien, Y. M. Lin, C. H. Liu, Ru Jye Yang, S. Pittikoun
Publikováno v:
IEEE Electron Device Letters. 29:1199-1202
In this letter, plasma nitridation and oxidation on interpoly dielectric (IPD; SiO2-SiN-SiO2 ) for cell programming speed and reliabilities are investigated. Nitrided top oxide with N2 plasma shows excellent physical and electrical properties in term
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c28d9687c2f3e3746ab938e1b8b5dbc2
https://doi.org/10.1109/led.2008.2004972
https://doi.org/10.1109/led.2008.2004972
Autor:
H. P. Hwang, S. Pittikoun, S. Aritome, Shin-Hsien Chen, Houng-Chi Wei, C. H. Liu, G. H. Tseng, C. M. Chao, Y. M. Lin, D. Y. Yin, H. W. Liaw
Publikováno v:
2009 IEEE International Memory Workshop.
The various methods of multi-nitridation ONO to improve NAND flash memory have been demonstrated in this paper. Excellent cell performance and reliability are obtained compared to convention ONO: (1) 1.9 V program voltage reduction owing to 23 A EOT
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::968e703ce9f991f771e87998f253e75c
https://doi.org/10.1109/imw.2009.5090583
https://doi.org/10.1109/imw.2009.5090583
Autor:
Shin-Hsien Chen, H. P. Hwang, P. J. Chiang, D. Y. Yin, C. Y. Ho, C. H. Hung, Y. Sakamoto, S. Aritome, R. J. Yang, C. H. Liu, S. Pittikoun, H. C. Wei, Y. M. Lin
Publikováno v:
2009 International Symposium on VLSI Technology, Systems, and Applications.
Multi-Nitridation ONO has been demonstrated for the first time. Significant improvement are obtained in NAND Flash performance and reliability. (1) 1V program voltage reduction owing to 10A EOT (equivalant oxide thickness ) reduction (2) More than 20
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::41ed34a1ed87e2a1fac955a3dbad8721
https://doi.org/10.1109/vtsa.2009.5159280
https://doi.org/10.1109/vtsa.2009.5159280
Publikováno v:
International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318).
This paper describes a novel scaled and low-voltage-operation NAND EEPROM technology with a G_ate-O_ffset NAND C_ell (GOC-NAND), which is free from program disturbance in a self-boosted program. In GOC-NAND, novel source/drain engineering is introduc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::35b81b16615fcc006aa9bd87df49f3c8
https://doi.org/10.1109/iedm.1999.823895
https://doi.org/10.1109/iedm.1999.823895
Autor:
K. Imamiya, Y. Sugiura, H. Nakamura, T. Himeno, K. Takeuchi, T. Ikehashi, K. Kanda, K. Hosono, R. Shirota, S. Aritome, K. Shimizu, K. Hatakeyama, K. Sakui
Publikováno v:
1999 IEEE International Solid-State Circuits Conference. Digest of Technical Papers. ISSCC. First Edition (Cat. No.99CH36278).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::14f49c118c748c6ef5a6e992b4025b1a
https://doi.org/10.1109/isscc.1999.759157
https://doi.org/10.1109/isscc.1999.759157
Publikováno v:
1996 Symposium on VLSI Technology. Digest of Technical Papers.
The read disturb degradation caused by source erase is studied. The anomalous Vth shift of about 1.0 V due to electron trapping is observed during read disturb. Vth shift due to electron trapping is more serious for high speed erase device. However,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5fceddda37fa56819d97d5694e26cd15
https://doi.org/10.1109/vlsit.1996.507865
https://doi.org/10.1109/vlsit.1996.507865
Autor:
K. Shimizu, K. Narita, H. Watanabe, E. Kamiya, Y. Takeuchi, T. Yaegashi, S. Aritome, T. Watanabe
Publikováno v:
International Electron Devices Meeting. IEDM Technical Digest.
This paper describes a novel high density 5F/sup 2/ (F: feature size) NAND STI cell technology which has been developed for a low bit-cost flash memories. The extremely small cell size of 0.31 /spl mu/m/sup 2/ has been obtained for the 0.25 um design
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8ee2709510247ec3d126debb647a35ee
https://doi.org/10.1109/iedm.1997.650379
https://doi.org/10.1109/iedm.1997.650379
Autor:
K. Hatakeyama, T. Maruyama H. Watanabe, T. Yamaguchi, S. Aritome, Koji Sakui, Tetsuo Endoh, Susumu Shuto, Gertjan Hemink, H. Iizuka, Toshihiro Tanaka, Riichiro Shirota, Masaki C O Patent Div Momodomi
Publikováno v:
Extended Abstracts of the 1993 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::259828792d1d19a7cba806be7089e542
https://doi.org/10.7567/ssdm.1993.pb-3-1
https://doi.org/10.7567/ssdm.1993.pb-3-1
Publikováno v:
28th International Reliability Physics Symposium.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a2db896613e641d2a3d4f408bbd9e19c
https://doi.org/10.1109/irps.1990.363530
https://doi.org/10.1109/irps.1990.363530
Autor:
Ching Yuan Ho, Chenhsin Lien, Y. Sakamoto, Ru Jye Yang, Hiro Fijita, C. H. Liu, Y. M. Lin, S. Pittikoun, S. Aritome
Publikováno v:
IEEE Electron Device Letters; Nov2008, Vol. 29 Issue 11, p1199-1202, 4p, 5 Graphs