Zobrazeno 1 - 10
of 23
pro vyhledávání: '"S. Alessandrino"'
Autor:
Patrick Fiorenza, Mario S. Alessandrino, Beatrice Carbone, Alfio Russo, Fabrizio Roccaforte, Filippo Giannazzo
Publikováno v:
Nanomaterials, Vol 11, Iss 6, p 1626 (2021)
In this paper, a two-dimensional (2D) planar scanning capacitance microscopy (SCM) method is used to visualize with a high spatial resolution the channel region of large-area 4H-SiC power MOSFETs and estimate the homogeneity of the channel length ove
Externí odkaz:
https://doaj.org/article/8de91cf8224c48cf9041b0afcab35dc0
Autor:
B. Carbone, M. S. Alessandrino, A. Russo, E. Vitanza, F. Giannazzo, P. Fiorenza, F. Roccaforte
Publikováno v:
2023 IEEE International Reliability Physics Symposium (IRPS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8981966b6fe64a0ef10ee901fe5c0dd3
https://doi.org/10.1109/irps48203.2023.10117835
https://doi.org/10.1109/irps48203.2023.10117835
Publikováno v:
2022 IEEE International Reliability Physics Symposium (IRPS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b3852162913ce61d07ddd6223861bbe1
https://doi.org/10.1109/irps48227.2022.9764513
https://doi.org/10.1109/irps48227.2022.9764513
Autor:
S. Alessandrino, B. Carbone, F. Cordiano, B. Mazza, A. Russo, W. Coco, M. Boscaglia, A. Di Salvo, A. Lombardo, D. Scarcella, E. Vitanza, P. Fiorenza
Publikováno v:
2022 IEEE International Reliability Physics Symposium (IRPS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c49d1408a6bc51255beef5e694747206
https://doi.org/10.1109/irps48227.2022.9764423
https://doi.org/10.1109/irps48227.2022.9764423
Autor:
Patrick Fiorenza, Filippo Giannazzo, Lukas K. Swanson, Alessia Frazzetto, Simona Lorenti, Mario S. Alessandrino, Fabrizio Roccaforte
Publikováno v:
Beilstein Journal of Nanotechnology, Vol 4, Iss 1, Pp 249-254 (2013)
The electrical compensation effect of the nitrogen incorporation at the SiO2/4H-SiC (p-type) interface after thermal treatments in ambient N2O is investigated employing both scanning spreading resistance microscopy (SSRM) and scanning capacitance mic
Externí odkaz:
https://doaj.org/article/9df2c9627cc54933afced03b1a20a9fb
Autor:
Edoardo Zanetti, Clarice Di Martino, Fabrizio Roccaforte, Mario S. Alessandrino, Mario Saggio, Alfio Russo, Carlo Venuto, Patrick Fiorenza, B. Carbone, Corrado Bongiorno, Filippo Giannazzo
Publikováno v:
Materials Science Forum
In this work, the origin of the dielectric breakdown of 4H-SiC power MOSFETs was studied at the nanoscale, analyzing devices that failed after extremely long (three months) of high temperature reverse bias (HTRB) stress. A one-to-one correspondence b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::22d87415afeb767d7a3a15d20a36b714
https://doi.org/10.4028/www.scientific.net/msf.1004.433
https://doi.org/10.4028/www.scientific.net/msf.1004.433
Autor:
Alfio Russo, Patrick Fiorenza, Mario S. Alessandrino, Filippo Giannazzo, Fabrizio Roccaforte, B. Carbone
Publikováno v:
Nanomaterials, Vol 11, Iss 1626, p 1626 (2021)
Nanomaterials
Volume 11
Issue 6
Nanomaterials
Volume 11
Issue 6
In this paper, a two-dimensional (2D) planar scanning capacitance microscopy (SCM) method is used to visualize with a high spatial resolution the channel region of large-area 4H-SiC power MOSFETs and estimate the homogeneity of the channel length ove
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a62314d023fdaa2a222509438cc78502
https://www.mdpi.com/2079-4991/11/6/1626
https://www.mdpi.com/2079-4991/11/6/1626
Autor:
Alfio Russo, C. Venuto, Edoardo Zanetti, E. Vitanza, Patrick Fiorenza, C. Bottari, C. Di Martino, Mario S. Alessandrino, S. Adamo, Fabrizio Roccaforte, B. Carbone, Mario Saggio, Filippo Giannazzo
Publikováno v:
IRPS
In this work, the breakdown of 4H-SiC MOSFETs was correlated with the presence of different crystalline defects in the 4H-SiC epitaxial layer. First, in a wafer level characterization, the devices not working at t = 0 s showed the presence of down-fa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::135ef24e5f6b2850ca39d86dee6822a7
https://doi.org/10.1109/irps46558.2021.9405148
https://doi.org/10.1109/irps46558.2021.9405148
Autor:
Filippo Giannazzo, Angelo Alberto Messina, Corrado Bongiorno, Patrick Fiorenza, Mario S. Alessandrino, Fabrizio Roccaforte, Mario Saggio
Publikováno v:
Applied Surface Science
In this paper, SiO2 layers deposited on 4H-SiC and subjected to different post deposition annealing (PDA) in NO and N2O were studied to identify the key factors influencing the channel mobility and threshold voltage stability in 4H-SiC MOSFETs. In pa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2e193f57a3650575813b38beab1422b5
Autor:
C. Di Martino, Mario Saggio, C. Venuto, Edoardo Zanetti, B. Carbone, Alfio Russo, Mario S. Alessandrino, Patrick Fiorenza, Filippo Giannazzo, Fabrizio Roccaforte
Publikováno v:
Nanotechnology
The origin of dielectric breakdown was studied on 4H-SiC MOSFETs that failed after three months of high temperature reverse bias (HTRB) stress. A local inspection of the failed devices demonstrated the presence of a threading dislocation (TD) at the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::222ce625af3218a35991361555196992
https://doi.org/10.1088/1361-6528/ab5ff6
https://doi.org/10.1088/1361-6528/ab5ff6